Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs
This work aims to present an investigation on short-circuit (SC) failure behaviour of SiC Power MOSFETs due to the onset of thermal runaway. As inferable from experimental outcomes, it is related to the formation of hotspot, whose exact location is mainly unpredictable and dictated by device structu...
| Main Authors: | , , , , |
|---|---|
| Format: | Conference or Workshop Item |
| Published: |
2016
|
| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/36365/ |
| _version_ | 1848795273707388928 |
|---|---|
| author | Romano, Gianpaolo Riccio, Michele Maresca, Luca Fayyaz, Asad Castellazzi, Alberto |
| author_facet | Romano, Gianpaolo Riccio, Michele Maresca, Luca Fayyaz, Asad Castellazzi, Alberto |
| author_sort | Romano, Gianpaolo |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | This work aims to present an investigation on short-circuit (SC) failure behaviour of SiC Power MOSFETs due to the onset of thermal runaway. As inferable from experimental outcomes, it is related to the formation of hotspot, whose exact location is mainly unpredictable and dictated by device structure and design parameters non-uniformities. TCAD simulations were performed to examine the impact of some parameters mismatch on hotspot formation and failure occurrence |
| first_indexed | 2025-11-14T19:29:28Z |
| format | Conference or Workshop Item |
| id | nottingham-36365 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:29:28Z |
| publishDate | 2016 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-363652020-05-04T17:59:22Z https://eprints.nottingham.ac.uk/36365/ Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs Romano, Gianpaolo Riccio, Michele Maresca, Luca Fayyaz, Asad Castellazzi, Alberto This work aims to present an investigation on short-circuit (SC) failure behaviour of SiC Power MOSFETs due to the onset of thermal runaway. As inferable from experimental outcomes, it is related to the formation of hotspot, whose exact location is mainly unpredictable and dictated by device structure and design parameters non-uniformities. TCAD simulations were performed to examine the impact of some parameters mismatch on hotspot formation and failure occurrence 2016-07-28 Conference or Workshop Item PeerReviewed Romano, Gianpaolo, Riccio, Michele, Maresca, Luca, Fayyaz, Asad and Castellazzi, Alberto (2016) Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs. In: 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 12-16 Jun 2016, Prague, Czech Republic. Silicon Carbide (SiC) Power MOSFET; Short-circuit failure; Short-Circuit ruggedness; Thermal Runaway; hot-spot; TCAD 2D simulation http://ieeexplore.ieee.org/document/7520774/?arnumber=7520774 |
| spellingShingle | Silicon Carbide (SiC) Power MOSFET; Short-circuit failure; Short-Circuit ruggedness; Thermal Runaway; hot-spot; TCAD 2D simulation Romano, Gianpaolo Riccio, Michele Maresca, Luca Fayyaz, Asad Castellazzi, Alberto Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs |
| title | Influence of design parameters on the short-circuit
ruggedness of SiC Power MOSFETs |
| title_full | Influence of design parameters on the short-circuit
ruggedness of SiC Power MOSFETs |
| title_fullStr | Influence of design parameters on the short-circuit
ruggedness of SiC Power MOSFETs |
| title_full_unstemmed | Influence of design parameters on the short-circuit
ruggedness of SiC Power MOSFETs |
| title_short | Influence of design parameters on the short-circuit
ruggedness of SiC Power MOSFETs |
| title_sort | influence of design parameters on the short-circuit
ruggedness of sic power mosfets |
| topic | Silicon Carbide (SiC) Power MOSFET; Short-circuit failure; Short-Circuit ruggedness; Thermal Runaway; hot-spot; TCAD 2D simulation |
| url | https://eprints.nottingham.ac.uk/36365/ https://eprints.nottingham.ac.uk/36365/ |