Experimental and analytical performance evaluation of SiC power devices in the matrix converter
With the commercial availability of SiC power devices, their acceptance is expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices. This paper presents the comparative performance evaluation of different Si...
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| Format: | Article |
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IEEE
2014
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| Online Access: | https://eprints.nottingham.ac.uk/35670/ |
| _version_ | 1848795134126194688 |
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| author | Safari, Saeed Castellazzi, Alberto Wheeler, Patrick |
| author_facet | Safari, Saeed Castellazzi, Alberto Wheeler, Patrick |
| author_sort | Safari, Saeed |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | With the commercial availability of SiC power devices, their acceptance is expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices. This paper presents the comparative performance evaluation of different SiC power devices in matrix converter at various temperatures and switching frequencies. To this end, firstly, gate or base drive circuits for Normally-off SiC JFET, SiC MOSFET and SiC BJT which taking into account the special demands for these devices are presented. Then, three 2-phase to 1-phase matrix converters are built with different SiC power devices to measure the switching waveforms and power losses for them at different temperatures and switching frequencies. Based on the measured data, three different SiC power devices are compared in terms of switching times, conduction and switching losses and efficiency at different temperatures and switching frequencies. Furthermore, a theoretical investigation of the power losses of three phase matrix converter with Normally-off SiC JFET, SiC MOSFET, SiC BJT and Si IGBT is described. The power losses estimation indicates that a 7 KW matrix converter would potentially have an efficiency of approximately 96% in high switching frequency if equipped with SiC devices. |
| first_indexed | 2025-11-14T19:27:15Z |
| format | Article |
| id | nottingham-35670 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:27:15Z |
| publishDate | 2014 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-356702020-05-04T16:45:51Z https://eprints.nottingham.ac.uk/35670/ Experimental and analytical performance evaluation of SiC power devices in the matrix converter Safari, Saeed Castellazzi, Alberto Wheeler, Patrick With the commercial availability of SiC power devices, their acceptance is expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices. This paper presents the comparative performance evaluation of different SiC power devices in matrix converter at various temperatures and switching frequencies. To this end, firstly, gate or base drive circuits for Normally-off SiC JFET, SiC MOSFET and SiC BJT which taking into account the special demands for these devices are presented. Then, three 2-phase to 1-phase matrix converters are built with different SiC power devices to measure the switching waveforms and power losses for them at different temperatures and switching frequencies. Based on the measured data, three different SiC power devices are compared in terms of switching times, conduction and switching losses and efficiency at different temperatures and switching frequencies. Furthermore, a theoretical investigation of the power losses of three phase matrix converter with Normally-off SiC JFET, SiC MOSFET, SiC BJT and Si IGBT is described. The power losses estimation indicates that a 7 KW matrix converter would potentially have an efficiency of approximately 96% in high switching frequency if equipped with SiC devices. IEEE 2014-05-01 Article PeerReviewed Safari, Saeed, Castellazzi, Alberto and Wheeler, Patrick (2014) Experimental and analytical performance evaluation of SiC power devices in the matrix converter. IEEE Transactions on Power Electronics, 29 (5). pp. 2584-2596. ISSN 0885-8993 Normally-off SiC JFET; SiC MOSFET; SiC BJT; power losses evaluation; matrix converter http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6658954 doi:10.1109/TPEL.2013.2289746 doi:10.1109/TPEL.2013.2289746 |
| spellingShingle | Normally-off SiC JFET; SiC MOSFET; SiC BJT; power losses evaluation; matrix converter Safari, Saeed Castellazzi, Alberto Wheeler, Patrick Experimental and analytical performance evaluation of SiC power devices in the matrix converter |
| title | Experimental and analytical performance evaluation of SiC power devices in the matrix converter |
| title_full | Experimental and analytical performance evaluation of SiC power devices in the matrix converter |
| title_fullStr | Experimental and analytical performance evaluation of SiC power devices in the matrix converter |
| title_full_unstemmed | Experimental and analytical performance evaluation of SiC power devices in the matrix converter |
| title_short | Experimental and analytical performance evaluation of SiC power devices in the matrix converter |
| title_sort | experimental and analytical performance evaluation of sic power devices in the matrix converter |
| topic | Normally-off SiC JFET; SiC MOSFET; SiC BJT; power losses evaluation; matrix converter |
| url | https://eprints.nottingham.ac.uk/35670/ https://eprints.nottingham.ac.uk/35670/ https://eprints.nottingham.ac.uk/35670/ |