Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

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Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of the alloys deviate significantly from an interpolation scheme based on small deviations from the virtual crysta...

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Bibliographic Details
Main Authors:	Yu, K.M., Sarney, W.L., Novikov, Sergei V., Segercrantz, N., Ting, M., Shaw, M., Svensson, S.P., Martin, R.W., Walukiewicz, W., Foxon, C.T.
Format:	Article
Published:	IOP Publishing 2016
Subjects:	Highly Mismatched Alloys Nitride Band Anticrossing Electronic Band Structure Photoelectrochemical Water Splitting
Online Access:	https://eprints.nottingham.ac.uk/35135/

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