Phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors

Phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy....

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Main Authors: Vdovin, Evgeny E., Mishchenko, A., Greenaway, M.T., Zhu, M.J., Ghazaryan, D., Misra, A., Cao, Y., Morozov, S.V., Makarovsky, Oleg, Fromhold, T.M., Patanè, Amalia, Slotman, G.J., Katsnelson, M.I., Geim, A K., Novoselov, K.S., Eaves, Laurence
Format: Article
Published: American Physical Society 2016
Online Access:https://eprints.nottingham.ac.uk/34927/

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