Phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy....
| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Article |
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American Physical Society
2016
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| Online Access: | https://eprints.nottingham.ac.uk/34927/ |
| _version_ | 1848794963897221120 |
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| author | Vdovin, Evgeny E. Mishchenko, A. Greenaway, M.T. Zhu, M.J. Ghazaryan, D. Misra, A. Cao, Y. Morozov, S.V. Makarovsky, Oleg Fromhold, T.M. Patanè, Amalia Slotman, G.J. Katsnelson, M.I. Geim, A K. Novoselov, K.S. Eaves, Laurence |
| author_facet | Vdovin, Evgeny E. Mishchenko, A. Greenaway, M.T. Zhu, M.J. Ghazaryan, D. Misra, A. Cao, Y. Morozov, S.V. Makarovsky, Oleg Fromhold, T.M. Patanè, Amalia Slotman, G.J. Katsnelson, M.I. Geim, A K. Novoselov, K.S. Eaves, Laurence |
| author_sort | Vdovin, Evgeny E. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene–boron nitride heterostructures and are close to peaks in the single phonon density of states. |
| first_indexed | 2025-11-14T19:24:33Z |
| format | Article |
| id | nottingham-34927 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:24:33Z |
| publishDate | 2016 |
| publisher | American Physical Society |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-349272020-05-04T17:53:07Z https://eprints.nottingham.ac.uk/34927/ Phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors Vdovin, Evgeny E. Mishchenko, A. Greenaway, M.T. Zhu, M.J. Ghazaryan, D. Misra, A. Cao, Y. Morozov, S.V. Makarovsky, Oleg Fromhold, T.M. Patanè, Amalia Slotman, G.J. Katsnelson, M.I. Geim, A K. Novoselov, K.S. Eaves, Laurence We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene–boron nitride heterostructures and are close to peaks in the single phonon density of states. American Physical Society 2016-05-05 Article PeerReviewed Vdovin, Evgeny E., Mishchenko, A., Greenaway, M.T., Zhu, M.J., Ghazaryan, D., Misra, A., Cao, Y., Morozov, S.V., Makarovsky, Oleg, Fromhold, T.M., Patanè, Amalia, Slotman, G.J., Katsnelson, M.I., Geim, A K., Novoselov, K.S. and Eaves, Laurence (2016) Phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors. Physical Review Letters, 116 (18). p. 186603. ISSN 0031-9007 http://dx.doi.org/10.1103/PhysRevLett.116.186603 doi:10.1103/PhysRevLett.116.186603 doi:10.1103/PhysRevLett.116.186603 |
| spellingShingle | Vdovin, Evgeny E. Mishchenko, A. Greenaway, M.T. Zhu, M.J. Ghazaryan, D. Misra, A. Cao, Y. Morozov, S.V. Makarovsky, Oleg Fromhold, T.M. Patanè, Amalia Slotman, G.J. Katsnelson, M.I. Geim, A K. Novoselov, K.S. Eaves, Laurence Phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors |
| title | Phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors |
| title_full | Phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors |
| title_fullStr | Phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors |
| title_full_unstemmed | Phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors |
| title_short | Phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors |
| title_sort | phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors |
| url | https://eprints.nottingham.ac.uk/34927/ https://eprints.nottingham.ac.uk/34927/ https://eprints.nottingham.ac.uk/34927/ |