GaN-HEMT dynamic ON-state resistance characterisation and modelling

QR Code

GaN-HEMT dynamic ON-state resistance characterisation and modelling

GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement results, a behavioural model is...

Full description

Bibliographic Details
Main Authors:	Li, Ke, Evans, Paul, Johnson, Christopher Mark
Format:	Conference or Workshop Item
Published:	2016
Subjects:	GaN-HEMT; Dynamic ON-state resistance; Power semiconductor device characterisation; Power semiconductor device modelling; Behavioural model
Online Access:	https://eprints.nottingham.ac.uk/34921/

Similar Items

Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance
by: Li, Ke, et al.
Published: (2017)

Characterisation and modeling of Gallium nitride power semiconductor devices dynamic on-state resistance
by: Li, Ke, et al.
Published: (2018)

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions
by: Li, Ke, et al.
Published: (2016)

GaN HEMT gate-driver for achieving high power converter integration levels
by: Wu, H, et al.
Published: (2018)

SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation
by: Li, Ke, et al.
Published: (2016)

Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures
by: Kocan, M., et al.
Published: (2008)

Biocompatibility of semiconducting AlGaN/GaN material with living cells
by: Podolska, Anna, et al.
Published: (2012)

Developing power semiconductor device model for virtual prototyping of power electronics systems
by: Li, Ke, et al.
Published: (2016)

Design of low inductance switching power cell for GaN HEMT based inverter
by: Gurpinar, Emre, et al.
Published: (2017)

Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter
by: Gurpinar, Emre, et al.
Published: (2016)

Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT
by: Oeder, Thorsten, et al.
Published: (2017)

Static and dynamic TSEPs of SiC and GaN transistors
by: Zhu, Siwei, et al.
Published: (2018)

Trade-off study of heat sink and output filter volume in a GaN HEMT based single phase inverter
by: Gurpinar, Emre, et al.
Published: (2017)

Tradeoff study of heat sink and output filter volume in a GaN HEMT based single-phase inverter
by: Gurpinar, Emre, et al.
Published: (2017)

Wide-bandgap semiconductor based power converters for renewable energy systems
by: Gurpinar, Emre
Published: (2017)

High-frequency power conversion for photovoltaic module applications
by: Sergentanis, Grigorios
Published: (2024)

EBIC study of Au / n-type GaN Schottky contacts
by: Moldovan, Grigore, et al.
Published: (2003)

Single-phase T-type inverter performance benchmark using Si IGBTs, SiC MOSFETs and GaN HEMTs
by: Gurpinar, Emre, et al.
Published: (2016)

Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters
by: Gurpinar, Emre, et al.
Published: (2016)

Single-phase T-Type inverter performance benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs
by: Gurpinar, Emre, et al.
Published: (2015)

Experimental demonstration of an optimised PWM scheme for more even device electro-thermal stress in a 3-Level ANPC GaN inverter
by: Zeng, Y., et al.
Published: (2018)

Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN
by: Moldovan, Grigore, et al.
Published: (2004)

Electrical and thermal failure modes of 600 V p-gate GaN HEMTs
by: Oeder, Thorsten, et al.
Published: (2017)

TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2003)

TEM assessment of As-doped GaN epitaxial layers grown on sapphire
by: Fay, Mike W., et al.
Published: (2004)

Characterisation, emulation and by-emitter degradation analysis of high power semiconductor laser diodes
by: Amuzuvi, Christian Kwaku
Published: (2010)

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes
by: Qian, H., et al.
Published: (2016)

Transient out-of-SOA robustness of SiC power MOSFETs
by: Castellazzi, Alberto, et al.
Published: (2017)

Individual device active cooling for enhanced system-level power density and more uniform temperature distribution
by: Zeng, Y., et al.
Published: (2018)

Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts to AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2001)

Investigation of deep level defects in advanced semiconductor materials and devices
by: AL Saqri, Noor alhuda Ahmed
Published: (2017)

Investigation of the optical and electrical properties of dilute nitride compound semiconductors based on GaP
by: Albalawi, Hind Mohammed
Published: (2019)

Picosecond/THz acoustic measurements of semiconductor devices
by: Devireddy, Srikanth Reddy
Published: (2018)

Coupling of Pyro–Piezo-Phototronic Effects in a GaN Nanowire
by: Qin, G., et al.
Published: (2023)

Anisotropic electromechanical properties of GaN ceramics caused by polarisation
by: Qin, G.S., et al.
Published: (2020)

Theoretical Nanoarchitectonics of GaN Nanowires for Ultraviolet Irradiation-Dependent Electromechanical Properties
by: Yang, K., et al.
Published: (2023)

Highly-integrated power cell for high-power wide band-gap power converters
by: Espina, Jordi, et al.
Published: (2017)

Microstructural characterisation of GaMnN ferromagnetic semiconductors grown on (001) oriented GaAs substrates by plasma assisted molecular beam epitaxy
by: Han, Yisong
Published: (2006)

Advanced packaging and integration solutions for enhanced performance power convertors
by: Solomon, Adane Kassa
Published: (2015)

Semiconductor devices in solid-state/hybrid circuit breakers: current status and future trends
by: Gu, Chunyang, et al.
Published: (2017)