GaN-HEMT dynamic ON-state resistance characterisation and modelling
GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement results, a behavioural model is...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
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2016
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| Online Access: | https://eprints.nottingham.ac.uk/34921/ |
| _version_ | 1848794963085623296 |
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| author | Li, Ke Evans, Paul Johnson, Christopher Mark |
| author_facet | Li, Ke Evans, Paul Johnson, Christopher Mark |
| author_sort | Li, Ke |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement results, a behavioural model is proposed to represent device dynamic RDS(on) values, in which trapping and detrapping time constant is represented by a series of RC network. The model is simulated in PSPICE, of which the simulation results of RDS(on) values are compared and validated with the measurement when device switches in a power converter with different duty cycles and switching voltages. The results show that RDS(on) values of this device would increase due to trapping effects. |
| first_indexed | 2025-11-14T19:24:32Z |
| format | Conference or Workshop Item |
| id | nottingham-34921 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:24:32Z |
| publishDate | 2016 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-349212020-05-04T17:54:36Z https://eprints.nottingham.ac.uk/34921/ GaN-HEMT dynamic ON-state resistance characterisation and modelling Li, Ke Evans, Paul Johnson, Christopher Mark GaN-HEMTs suffer from trapping effects which might increase device ON-state resistance (RDS(on)) values. Thus, dynamic RDS(on) of a commercial GaN-HEMT is characterized at different bias voltages in the paper by a proposed measurement circuit. Based on the measurement results, a behavioural model is proposed to represent device dynamic RDS(on) values, in which trapping and detrapping time constant is represented by a series of RC network. The model is simulated in PSPICE, of which the simulation results of RDS(on) values are compared and validated with the measurement when device switches in a power converter with different duty cycles and switching voltages. The results show that RDS(on) values of this device would increase due to trapping effects. 2016-06-30 Conference or Workshop Item PeerReviewed Li, Ke, Evans, Paul and Johnson, Christopher Mark (2016) GaN-HEMT dynamic ON-state resistance characterisation and modelling. In: 17th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2016, 27–30 June 2016, Trondheim, Norway. GaN-HEMT; Dynamic ON-state resistance; Power semiconductor device characterisation; Power semiconductor device modelling; Behavioural model |
| spellingShingle | GaN-HEMT; Dynamic ON-state resistance; Power semiconductor device characterisation; Power semiconductor device modelling; Behavioural model Li, Ke Evans, Paul Johnson, Christopher Mark GaN-HEMT dynamic ON-state resistance characterisation and modelling |
| title | GaN-HEMT dynamic ON-state resistance characterisation and modelling |
| title_full | GaN-HEMT dynamic ON-state resistance characterisation and modelling |
| title_fullStr | GaN-HEMT dynamic ON-state resistance characterisation and modelling |
| title_full_unstemmed | GaN-HEMT dynamic ON-state resistance characterisation and modelling |
| title_short | GaN-HEMT dynamic ON-state resistance characterisation and modelling |
| title_sort | gan-hemt dynamic on-state resistance characterisation and modelling |
| topic | GaN-HEMT; Dynamic ON-state resistance; Power semiconductor device characterisation; Power semiconductor device modelling; Behavioural model |
| url | https://eprints.nottingham.ac.uk/34921/ |