Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range
In this letter, we study the optical properties of GaN1�xSbx thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 �C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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American Institute of Physics
2015
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| Online Access: | https://eprints.nottingham.ac.uk/34755/ |
| _version_ | 1848794927887024128 |
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| author | Segercrantz, N. Yu, K.M. Ting, M. Sarney, W.L. Svensson, S.P. Novikov, S.V. Foxon, C.T. Walukiewicz, W. |
| author_facet | Segercrantz, N. Yu, K.M. Ting, M. Sarney, W.L. Svensson, S.P. Novikov, S.V. Foxon, C.T. Walukiewicz, W. |
| author_sort | Segercrantz, N. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | In this letter, we study the optical properties of GaN1�xSbx thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 �C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model that is applicable to highly mismatched alloys such as GaN1�xSbx in the entire composition range. The presented model allows us to more accurately determine the band gap as well as the band
edges over the entire composition range thereby providing means for determining the composition for, e.g., efficient spontaneous photoelectrochemical cell applications |
| first_indexed | 2025-11-14T19:23:58Z |
| format | Article |
| id | nottingham-34755 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T19:23:58Z |
| publishDate | 2015 |
| publisher | American Institute of Physics |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-347552017-10-12T21:00:26Z https://eprints.nottingham.ac.uk/34755/ Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range Segercrantz, N. Yu, K.M. Ting, M. Sarney, W.L. Svensson, S.P. Novikov, S.V. Foxon, C.T. Walukiewicz, W. In this letter, we study the optical properties of GaN1�xSbx thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 �C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model that is applicable to highly mismatched alloys such as GaN1�xSbx in the entire composition range. The presented model allows us to more accurately determine the band gap as well as the band edges over the entire composition range thereby providing means for determining the composition for, e.g., efficient spontaneous photoelectrochemical cell applications American Institute of Physics 2015-10-06 Article PeerReviewed application/pdf en https://eprints.nottingham.ac.uk/34755/1/APL107_2015_142104.pdf Segercrantz, N., Yu, K.M., Ting, M., Sarney, W.L., Svensson, S.P., Novikov, S.V., Foxon, C.T. and Walukiewicz, W. (2015) Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range. Applied Physics Letters, 107 (14). 142104/1-142104/4. ISSN 1077-3118 http://scitation.aip.org/content/aip/journal/apl/107/14/10.1063/1.4932592 doi:10.1063/1.4932592 doi:10.1063/1.4932592 |
| spellingShingle | Segercrantz, N. Yu, K.M. Ting, M. Sarney, W.L. Svensson, S.P. Novikov, S.V. Foxon, C.T. Walukiewicz, W. Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range |
| title | Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range |
| title_full | Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range |
| title_fullStr | Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range |
| title_full_unstemmed | Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range |
| title_short | Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range |
| title_sort | electronic band structure of highly mismatched gan1−xsbx alloys in a broad composition range |
| url | https://eprints.nottingham.ac.uk/34755/ https://eprints.nottingham.ac.uk/34755/ https://eprints.nottingham.ac.uk/34755/ |