Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range
In this letter, we study the optical properties of GaN1�xSbx thin films. Films with an Sb fraction up to 42% were synthesized by alternating GaN-GaSb layers at a constant temperature of 325 �C. The measured optical absorption data of the films are interpreted using a modified band anticrossing model...
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Bibliographic Details
| Main Authors: |
Segercrantz, N.,
Yu, K.M.,
Ting, M.,
Sarney, W.L.,
Svensson, S.P.,
Novikov, S.V.,
Foxon, C.T.,
Walukiewicz, W. |
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| Format: | Article
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| Language: | English |
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| Published: |
American Institute of Physics
2015
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| Online Access: | https://eprints.nottingham.ac.uk/34755/
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