Strain-engineered graphene grown on hexagonal boron nitride by molecular beam epitaxy

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Strain-engineered graphene grown on hexagonal boron nitride by molecular beam epitaxy

Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré pat...

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Bibliographic Details
Main Authors:	Summerfield, Alex, Davies, Andrew, Cheng, Tin S., Korolkov, Vladimir V., Cho, YongJin, Mellor, Christopher J., Foxon, C. Thomas, Khlobystov, Andrei N., Watanabe, Kenji, Taniguchi, Takashi, Eaves, Laurence, Novikov, Sergei V., Beton, Peter H.
Format:	Article
Published:	Nature Publishing Group 2016
Online Access:	https://eprints.nottingham.ac.uk/34735/

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