Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration

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Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration

We report room-temperature Raman scattering studies of nominally undoped (100) GaAs1−xBix epitaxial layers exhibiting Biinduced (p-type) longitudinal-optical-plasmon coupled (LOPC) modes for 0.018≤x≤0.048. Redshifts in the GaAs-like optical modes due to alloying are evaluated and are paralleled by s...

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Bibliographic Details
Main Authors:	Steele, J.A., Lewis, R.A., Henini, M., Lemine, O.M., Fan, D, Mazur, Y.I., Dorogan, V.G., Grant, P.C., Yu, S.Q., Salamo, G.J.
Format:	Article
Published:	Optical Society of America 2014
Online Access:	https://eprints.nottingham.ac.uk/34557/

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