Steele, J., Lewis, R., Henini, M., Lemine, O., Fan, D., Mazur, Y., . . . Salamo, G. (2014). Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: Optical determination of carrier concentration. Optical Society of America.
Chicago Style (17th ed.) CitationSteele, J.A, et al. Raman Scattering Reveals Strong LO-phonon-hole-plasmon Coupling in Nominally Undoped GaAsBi: Optical Determination of Carrier Concentration. Optical Society of America, 2014.
MLA (9th ed.) CitationSteele, J.A, et al. Raman Scattering Reveals Strong LO-phonon-hole-plasmon Coupling in Nominally Undoped GaAsBi: Optical Determination of Carrier Concentration. Optical Society of America, 2014.
Warning: These citations may not always be 100% accurate.