Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As

We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has an easy axis in the sample plane, and (Ga,Mn)(As,P), which has an easy axis perpendicular to the sample plane.We use an optical analog of ferromagnetic resonancewhere the l...

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Main Authors: Tesařová, N., Butkovičová, D., Campion, R.P., Rushforth, A.W., Edmonds, K.W., Wadley, P., Gallagher, B.L., Schmoranzerová, E., Trojánek, F., Malý, P., Motloch, P., Novák, V., Jungwirth, T., Němec, P.
Format: Article
Published: American Physical Society 2014
Online Access:https://eprints.nottingham.ac.uk/34351/
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author Tesařová, N.
Butkovičová, D.
Campion, R.P.
Rushforth, A.W.
Edmonds, K.W.
Wadley, P.
Gallagher, B.L.
Schmoranzerová, E.
Trojánek, F.
Malý, P.
Motloch, P.
Novák, V.
Jungwirth, T.
Němec, P.
author_facet Tesařová, N.
Butkovičová, D.
Campion, R.P.
Rushforth, A.W.
Edmonds, K.W.
Wadley, P.
Gallagher, B.L.
Schmoranzerová, E.
Trojánek, F.
Malý, P.
Motloch, P.
Novák, V.
Jungwirth, T.
Němec, P.
author_sort Tesařová, N.
building Nottingham Research Data Repository
collection Online Access
description We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has an easy axis in the sample plane, and (Ga,Mn)(As,P), which has an easy axis perpendicular to the sample plane.We use an optical analog of ferromagnetic resonancewhere the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis of a single set of pump-and-probe magneto-optical data, we determined the magnetic anisotropy fields, the spin stiffness, and the Gilbert damping constant in these two materials. We show that incorporation of 10% of phosphorus in (Ga,Mn)As with 6% of manganese leads not only to the expected sign change of the perpendicular-to-plane anisotropy field but also to an increase of the Gilbert damping and to a reduction of the spin stiffness. The observed changes in the micromagnetic parameters upon incorporating P in (Ga,Mn)As are consistent with the reduced hole density, conductivity, and Curie temperature of the (Ga,Mn)(As,P) material.We also show that the apparent magnetization precession damping is stronger for the n=1 spinwave resonance mode than for the n=0 uniform magnetization precession mode.
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spelling nottingham-343512020-05-04T16:55:17Z https://eprints.nottingham.ac.uk/34351/ Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As Tesařová, N. Butkovičová, D. Campion, R.P. Rushforth, A.W. Edmonds, K.W. Wadley, P. Gallagher, B.L. Schmoranzerová, E. Trojánek, F. Malý, P. Motloch, P. Novák, V. Jungwirth, T. Němec, P. We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has an easy axis in the sample plane, and (Ga,Mn)(As,P), which has an easy axis perpendicular to the sample plane.We use an optical analog of ferromagnetic resonancewhere the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis of a single set of pump-and-probe magneto-optical data, we determined the magnetic anisotropy fields, the spin stiffness, and the Gilbert damping constant in these two materials. We show that incorporation of 10% of phosphorus in (Ga,Mn)As with 6% of manganese leads not only to the expected sign change of the perpendicular-to-plane anisotropy field but also to an increase of the Gilbert damping and to a reduction of the spin stiffness. The observed changes in the micromagnetic parameters upon incorporating P in (Ga,Mn)As are consistent with the reduced hole density, conductivity, and Curie temperature of the (Ga,Mn)(As,P) material.We also show that the apparent magnetization precession damping is stronger for the n=1 spinwave resonance mode than for the n=0 uniform magnetization precession mode. American Physical Society 2014-10-23 Article PeerReviewed Tesařová, N., Butkovičová, D., Campion, R.P., Rushforth, A.W., Edmonds, K.W., Wadley, P., Gallagher, B.L., Schmoranzerová, E., Trojánek, F., Malý, P., Motloch, P., Novák, V., Jungwirth, T. and Němec, P. (2014) Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As. Physical Review B, 90 . 155203/1-155203/12. ISSN 1098-0121 http://journals.aps.org/prb/abstract/10.1103/PhysRevB.90.155203 doi:10.1103/PhysRevB.90.155203 doi:10.1103/PhysRevB.90.155203
spellingShingle Tesařová, N.
Butkovičová, D.
Campion, R.P.
Rushforth, A.W.
Edmonds, K.W.
Wadley, P.
Gallagher, B.L.
Schmoranzerová, E.
Trojánek, F.
Malý, P.
Motloch, P.
Novák, V.
Jungwirth, T.
Němec, P.
Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As
title Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As
title_full Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As
title_fullStr Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As
title_full_unstemmed Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As
title_short Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As
title_sort comparison of micromagnetic parameters of the ferromagnetic semiconductors (ga,mn)(as,p) and (ga,mn)as
url https://eprints.nottingham.ac.uk/34351/
https://eprints.nottingham.ac.uk/34351/
https://eprints.nottingham.ac.uk/34351/