SiC power MOSFETs performance, robustness and technology maturity

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SiC power MOSFETs performance, robustness and technology maturity

Relatively recently, SiC power MOSFETs have transitioned from being a research exercise to becoming an industrial reality. The potential benefits that can be drawn from this technology in the electrical energy conversion domain have been amply discussed and partly demonstrated. Before their widespre...

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Bibliographic Details
Main Authors:	Castellazzi, Alberto, Fayyaz, Asad, Romano, G., Yang, Li, Riccio, M., Irace, A.
Format:	Article
Published:	Elsevier 2016
Subjects:	Silicon Carbide (SiC); power MOSFETs; reliability; robustness
Online Access:	https://eprints.nottingham.ac.uk/33380/

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