SiC power MOSFETs performance, robustness and technology maturity
Relatively recently, SiC power MOSFETs have transitioned from being a research exercise to becoming an industrial reality. The potential benefits that can be drawn from this technology in the electrical energy conversion domain have been amply discussed and partly demonstrated. Before their widespre...
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| Format: | Article |
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Elsevier
2016
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| Online Access: | https://eprints.nottingham.ac.uk/33380/ |
| _version_ | 1848794618503626752 |
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| author | Castellazzi, Alberto Fayyaz, Asad Romano, G. Yang, Li Riccio, M. Irace, A. |
| author_facet | Castellazzi, Alberto Fayyaz, Asad Romano, G. Yang, Li Riccio, M. Irace, A. |
| author_sort | Castellazzi, Alberto |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Relatively recently, SiC power MOSFETs have transitioned from being a research exercise to becoming an industrial reality. The potential benefits that can be drawn from this technology in the electrical energy conversion domain have been amply discussed and partly demonstrated. Before their widespread use in the field, the transistors need to be thoroughly investigated and later validated for robustness and longer term stability and reliability. This paper proposes a review of commercial SiC power MOSFETs state-of-the-art characteristics and discusses trends and needs for further technology improvements, as well as device design and engineering advancements to meet the increasing demands of power electronics. |
| first_indexed | 2025-11-14T19:19:03Z |
| format | Article |
| id | nottingham-33380 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:19:03Z |
| publishDate | 2016 |
| publisher | Elsevier |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-333802020-05-04T17:34:09Z https://eprints.nottingham.ac.uk/33380/ SiC power MOSFETs performance, robustness and technology maturity Castellazzi, Alberto Fayyaz, Asad Romano, G. Yang, Li Riccio, M. Irace, A. Relatively recently, SiC power MOSFETs have transitioned from being a research exercise to becoming an industrial reality. The potential benefits that can be drawn from this technology in the electrical energy conversion domain have been amply discussed and partly demonstrated. Before their widespread use in the field, the transistors need to be thoroughly investigated and later validated for robustness and longer term stability and reliability. This paper proposes a review of commercial SiC power MOSFETs state-of-the-art characteristics and discusses trends and needs for further technology improvements, as well as device design and engineering advancements to meet the increasing demands of power electronics. Elsevier 2016-03-01 Article PeerReviewed Castellazzi, Alberto, Fayyaz, Asad, Romano, G., Yang, Li, Riccio, M. and Irace, A. (2016) SiC power MOSFETs performance, robustness and technology maturity. Microelectronics Reliability, 58 . pp. 164-176. ISSN 0026-2714 Silicon Carbide (SiC); power MOSFETs; reliability; robustness http://dx.doi.org/10.1016/j.microrel.2015.12.034 doi:10.1016/j.microrel.2015.12.034 doi:10.1016/j.microrel.2015.12.034 |
| spellingShingle | Silicon Carbide (SiC); power MOSFETs; reliability; robustness Castellazzi, Alberto Fayyaz, Asad Romano, G. Yang, Li Riccio, M. Irace, A. SiC power MOSFETs performance, robustness and technology maturity |
| title | SiC power MOSFETs performance, robustness and technology maturity |
| title_full | SiC power MOSFETs performance, robustness and technology maturity |
| title_fullStr | SiC power MOSFETs performance, robustness and technology maturity |
| title_full_unstemmed | SiC power MOSFETs performance, robustness and technology maturity |
| title_short | SiC power MOSFETs performance, robustness and technology maturity |
| title_sort | sic power mosfets performance, robustness and technology maturity |
| topic | Silicon Carbide (SiC); power MOSFETs; reliability; robustness |
| url | https://eprints.nottingham.ac.uk/33380/ https://eprints.nottingham.ac.uk/33380/ https://eprints.nottingham.ac.uk/33380/ |