Dependence of overcurrent failure modes of IGBT modules on interconnect technologies
Insulated gate bipolar transistor (IGBT) modules which can fail to short circuit mode have great of applications in electricity network related fields. Single IGBT samples have been constructed with the standard Al wire bonding, flexible printed circuit board (PCB) interconnect and sandwich structur...
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| Format: | Article |
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Elsevier
2015
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| Online Access: | https://eprints.nottingham.ac.uk/33373/ |
| _version_ | 1848794616486166528 |
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| author | Yaqub, Imran Li, Jianfeng Johnson, Christopher Mark |
| author_facet | Yaqub, Imran Li, Jianfeng Johnson, Christopher Mark |
| author_sort | Yaqub, Imran |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Insulated gate bipolar transistor (IGBT) modules which can fail to short circuit mode have great of applications in electricity network related fields. Single IGBT samples have been constructed with the standard Al wire bonding, flexible printed circuit board (PCB) interconnect and sandwich structure technologies. The overcurrent failure modes of the constructed IGBT samples have been tested under a range of energy levels, and the structures of the tested samples have been characterized with scanning electronic microscopy and three-dimensional X-ray computed tomography imaging. The results obtained indicate that the IGBT samples constructed with the three interconnect technologies can fail to both open circuit mode and short circuit mode. The sandwich structure IGBT sample can fail to short circuit mode under an energy level of 750 J which can meet realistic industrial applications. The networked conductive phases within the solidification structure and the Sn-3.5Ag filled in the cracks within the residual Si IGBT are responsible for forming the conducting paths in the tested samples. Both liquid phase and gas phase can be formed and the highest temperature can reach the boiling point of Si even if the sandwich structure IGBT sample is tested with short circuit failure mode. |
| first_indexed | 2025-11-14T19:19:01Z |
| format | Article |
| id | nottingham-33373 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:19:01Z |
| publishDate | 2015 |
| publisher | Elsevier |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-333732020-05-04T17:21:10Z https://eprints.nottingham.ac.uk/33373/ Dependence of overcurrent failure modes of IGBT modules on interconnect technologies Yaqub, Imran Li, Jianfeng Johnson, Christopher Mark Insulated gate bipolar transistor (IGBT) modules which can fail to short circuit mode have great of applications in electricity network related fields. Single IGBT samples have been constructed with the standard Al wire bonding, flexible printed circuit board (PCB) interconnect and sandwich structure technologies. The overcurrent failure modes of the constructed IGBT samples have been tested under a range of energy levels, and the structures of the tested samples have been characterized with scanning electronic microscopy and three-dimensional X-ray computed tomography imaging. The results obtained indicate that the IGBT samples constructed with the three interconnect technologies can fail to both open circuit mode and short circuit mode. The sandwich structure IGBT sample can fail to short circuit mode under an energy level of 750 J which can meet realistic industrial applications. The networked conductive phases within the solidification structure and the Sn-3.5Ag filled in the cracks within the residual Si IGBT are responsible for forming the conducting paths in the tested samples. Both liquid phase and gas phase can be formed and the highest temperature can reach the boiling point of Si even if the sandwich structure IGBT sample is tested with short circuit failure mode. Elsevier 2015-12-01 Article PeerReviewed Yaqub, Imran, Li, Jianfeng and Johnson, Christopher Mark (2015) Dependence of overcurrent failure modes of IGBT modules on interconnect technologies. Microelectronics Reliability, 55 (12). pp. 2596-2605. ISSN 0026-2714 Failure to short circuit; Failure to open circuit; Wirebond; Flexible PCB; Sandwich structure; Microstructure http://dx.doi.org/10.1016/j.microrel.2015.09.020 doi:10.1016/j.microrel.2015.09.020 doi:10.1016/j.microrel.2015.09.020 |
| spellingShingle | Failure to short circuit; Failure to open circuit; Wirebond; Flexible PCB; Sandwich structure; Microstructure Yaqub, Imran Li, Jianfeng Johnson, Christopher Mark Dependence of overcurrent failure modes of IGBT modules on interconnect technologies |
| title | Dependence of overcurrent failure modes of IGBT modules on interconnect technologies |
| title_full | Dependence of overcurrent failure modes of IGBT modules on interconnect technologies |
| title_fullStr | Dependence of overcurrent failure modes of IGBT modules on interconnect technologies |
| title_full_unstemmed | Dependence of overcurrent failure modes of IGBT modules on interconnect technologies |
| title_short | Dependence of overcurrent failure modes of IGBT modules on interconnect technologies |
| title_sort | dependence of overcurrent failure modes of igbt modules on interconnect technologies |
| topic | Failure to short circuit; Failure to open circuit; Wirebond; Flexible PCB; Sandwich structure; Microstructure |
| url | https://eprints.nottingham.ac.uk/33373/ https://eprints.nottingham.ac.uk/33373/ https://eprints.nottingham.ac.uk/33373/ |