Integrated half-bridge switch using 70-μm-thin devices and hollow interconnects

Integrated half-bridge switch using 70-μm-thin devices and hollow interconnects

An application-oriented integration concept for a half-bridge switch assembly has been developed based on the latest generation 70- μm-thin insulated gate bipolar transistors and diodes, which are rated at 600 V/200 A. This paper addresses the design and reliability of the assembly, with a fully bon...

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Bibliographic Details
Main Authors: Solomon, Adane Kassa, Li, Jianfeng, Castellazzi, Alberto, Johnson, Christopher Mark
Format: Article
Published: IEEE 2015
Subjects:
Bridges; Copper; Electronics packaging; Flip chip devices; Insulated gate bipolar transistors (IGBT); Power electronics Application-oriented; Copper bumps; Electromagnetic performance; Experimental test; Flip chip; Solder joints; Structural simulations; Thermo-mechanical stress Integrated circuit interconnects
Online Access:https://eprints.nottingham.ac.uk/33354/

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