Integrated half-bridge switch using 70-μm-thin devices and hollow interconnects
An application-oriented integration concept for a half-bridge switch assembly has been developed based on the latest generation 70- μm-thin insulated gate bipolar transistors and diodes, which are rated at 600 V/200 A. This paper addresses the design and reliability of the assembly, with a fully bon...
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| Format: | Article |
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IEEE
2015
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| Online Access: | https://eprints.nottingham.ac.uk/33354/ |
| _version_ | 1848794612523597824 |
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| author | Solomon, Adane Kassa Li, Jianfeng Castellazzi, Alberto Johnson, Christopher Mark |
| author_facet | Solomon, Adane Kassa Li, Jianfeng Castellazzi, Alberto Johnson, Christopher Mark |
| author_sort | Solomon, Adane Kassa |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | An application-oriented integration concept for a half-bridge switch assembly has been developed based on the latest generation 70- μm-thin insulated gate bipolar transistors and diodes, which are rated at 600 V/200 A. This paper addresses the design and reliability of the assembly, with a fully bondwireless approach using cylindrical copper bumps. Advanced numerical structural simulation techniques are also applied to assess the influence of interconnect characteristics (material, size, and shape) and try to determine an optimum solution for reducing the stress and creep strain development in the solder joint. Preliminary experimental tests of the power module are also carried out at different switching frequency and loads to prove the validity of the proposed solution in terms of electromagnetic performance. |
| first_indexed | 2025-11-14T19:18:58Z |
| format | Article |
| id | nottingham-33354 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:18:58Z |
| publishDate | 2015 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-333542020-05-04T20:10:22Z https://eprints.nottingham.ac.uk/33354/ Integrated half-bridge switch using 70-μm-thin devices and hollow interconnects Solomon, Adane Kassa Li, Jianfeng Castellazzi, Alberto Johnson, Christopher Mark An application-oriented integration concept for a half-bridge switch assembly has been developed based on the latest generation 70- μm-thin insulated gate bipolar transistors and diodes, which are rated at 600 V/200 A. This paper addresses the design and reliability of the assembly, with a fully bondwireless approach using cylindrical copper bumps. Advanced numerical structural simulation techniques are also applied to assess the influence of interconnect characteristics (material, size, and shape) and try to determine an optimum solution for reducing the stress and creep strain development in the solder joint. Preliminary experimental tests of the power module are also carried out at different switching frequency and loads to prove the validity of the proposed solution in terms of electromagnetic performance. IEEE 2015-01 Article PeerReviewed Solomon, Adane Kassa, Li, Jianfeng, Castellazzi, Alberto and Johnson, Christopher Mark (2015) Integrated half-bridge switch using 70-μm-thin devices and hollow interconnects. IEEE Transactions on Industry Applications, 51 (1). pp. 556-566. ISSN 1939-9367 Bridges; Copper; Electronics packaging; Flip chip devices; Insulated gate bipolar transistors (IGBT); Power electronics Application-oriented; Copper bumps; Electromagnetic performance; Experimental test; Flip chip; Solder joints; Structural simulations; Thermo-mechanical stress Integrated circuit interconnects http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6848776 doi:10.1109/TIA.2014.2334734 doi:10.1109/TIA.2014.2334734 |
| spellingShingle | Bridges; Copper; Electronics packaging; Flip chip devices; Insulated gate bipolar transistors (IGBT); Power electronics Application-oriented; Copper bumps; Electromagnetic performance; Experimental test; Flip chip; Solder joints; Structural simulations; Thermo-mechanical stress Integrated circuit interconnects Solomon, Adane Kassa Li, Jianfeng Castellazzi, Alberto Johnson, Christopher Mark Integrated half-bridge switch using 70-μm-thin devices and hollow interconnects |
| title | Integrated half-bridge switch using 70-μm-thin devices and hollow interconnects |
| title_full | Integrated half-bridge switch using 70-μm-thin devices and hollow interconnects |
| title_fullStr | Integrated half-bridge switch using 70-μm-thin devices and hollow interconnects |
| title_full_unstemmed | Integrated half-bridge switch using 70-μm-thin devices and hollow interconnects |
| title_short | Integrated half-bridge switch using 70-μm-thin devices and hollow interconnects |
| title_sort | integrated half-bridge switch using 70-μm-thin devices and hollow interconnects |
| topic | Bridges; Copper; Electronics packaging; Flip chip devices; Insulated gate bipolar transistors (IGBT); Power electronics Application-oriented; Copper bumps; Electromagnetic performance; Experimental test; Flip chip; Solder joints; Structural simulations; Thermo-mechanical stress Integrated circuit interconnects |
| url | https://eprints.nottingham.ac.uk/33354/ https://eprints.nottingham.ac.uk/33354/ https://eprints.nottingham.ac.uk/33354/ |