Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport

We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The β-In2Se3 layers are chemically stable at room temperature and exhibit a blue-shift of the photoluminescence emission when the layer th...

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Main Authors: Balakrishnan, Nilanthy, Staddon, Christopher R., Smith, Emily F., Stec, Jakub, Gay, Dean, Mudd, Garry W., Makarovsky, Oleg, Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Eaves, Laurence, Patanè, Amalia, Beton, Peter H.
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Published: IOP Publishing 2016
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Online Access:https://eprints.nottingham.ac.uk/33256/
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author Balakrishnan, Nilanthy
Staddon, Christopher R.
Smith, Emily F.
Stec, Jakub
Gay, Dean
Mudd, Garry W.
Makarovsky, Oleg
Kudrynskyi, Zakhar R.
Kovalyuk, Zakhar D.
Eaves, Laurence
Patanè, Amalia
Beton, Peter H.
author_facet Balakrishnan, Nilanthy
Staddon, Christopher R.
Smith, Emily F.
Stec, Jakub
Gay, Dean
Mudd, Garry W.
Makarovsky, Oleg
Kudrynskyi, Zakhar R.
Kovalyuk, Zakhar D.
Eaves, Laurence
Patanè, Amalia
Beton, Peter H.
author_sort Balakrishnan, Nilanthy
building Nottingham Research Data Repository
collection Online Access
description We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The β-In2Se3 layers are chemically stable at room temperature and exhibit a blue-shift of the photoluminescence emission when the layer thickness is reduced, due to strong quantum confinement of carriers by the physical boundaries of the material. The layers are characterized using Raman spectroscopy and X-ray diffraction from which we confirm lattice constants c = 28.31±0.05 Å and a = 3.99±0.02 Å. In addition, these layers show high photoresponsivity of up to ~ 2×103 A/W at λ = 633 nm, with rise and decay times of τr = 0.6 ms and τd = 2.5 ms, respectively, confirming the potential of the as-grown layers for high sensitivity, fast photodetectors.
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institution University of Nottingham Malaysia Campus
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publishDate 2016
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spelling nottingham-332562020-05-04T17:44:31Z https://eprints.nottingham.ac.uk/33256/ Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport Balakrishnan, Nilanthy Staddon, Christopher R. Smith, Emily F. Stec, Jakub Gay, Dean Mudd, Garry W. Makarovsky, Oleg Kudrynskyi, Zakhar R. Kovalyuk, Zakhar D. Eaves, Laurence Patanè, Amalia Beton, Peter H. We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The β-In2Se3 layers are chemically stable at room temperature and exhibit a blue-shift of the photoluminescence emission when the layer thickness is reduced, due to strong quantum confinement of carriers by the physical boundaries of the material. The layers are characterized using Raman spectroscopy and X-ray diffraction from which we confirm lattice constants c = 28.31±0.05 Å and a = 3.99±0.02 Å. In addition, these layers show high photoresponsivity of up to ~ 2×103 A/W at λ = 633 nm, with rise and decay times of τr = 0.6 ms and τd = 2.5 ms, respectively, confirming the potential of the as-grown layers for high sensitivity, fast photodetectors. IOP Publishing 2016-04-29 Article PeerReviewed Balakrishnan, Nilanthy, Staddon, Christopher R., Smith, Emily F., Stec, Jakub, Gay, Dean, Mudd, Garry W., Makarovsky, Oleg, Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Eaves, Laurence, Patanè, Amalia and Beton, Peter H. (2016) Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport. 2D Materials . ISSN 2053-1583 (In Press) In2Se3; van der Waals layered crystals; 2D materials; quantum confinement; physical vapour transport
spellingShingle In2Se3; van der Waals layered crystals; 2D materials; quantum confinement; physical vapour transport
Balakrishnan, Nilanthy
Staddon, Christopher R.
Smith, Emily F.
Stec, Jakub
Gay, Dean
Mudd, Garry W.
Makarovsky, Oleg
Kudrynskyi, Zakhar R.
Kovalyuk, Zakhar D.
Eaves, Laurence
Patanè, Amalia
Beton, Peter H.
Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport
title Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport
title_full Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport
title_fullStr Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport
title_full_unstemmed Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport
title_short Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport
title_sort quantum confinement and photoresponsivity of β-in2se3 nanosheets grown by physical vapour transport
topic In2Se3; van der Waals layered crystals; 2D materials; quantum confinement; physical vapour transport
url https://eprints.nottingham.ac.uk/33256/