Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors

Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy....

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Main Authors: Vdovin, Evgeny E., Mishchenko, A., Greenaway, M.T., Zhu, M.J., Ghazaryan, D., Misra, A., Cao, Y., Morozov, S.V., Makarovsky, Oleg, Fromhold, T.M., Patanè, Amalia, Slotman, G.J., Katsnelson, M. I, Geim, A.K., Nososelov, K.S., Eaves, Laurence
Format: Article
Published: American Physical Society 2016
Online Access:https://eprints.nottingham.ac.uk/32831/

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