Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs

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Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs

This paper presents an analytical and experimental comparison between comparable Silicon (Si) IGBTs and Silicon Carbide (SiC) MOSFETS when used in a direct AC/AC matrix converter circuit. The switching performance of the two devices is analysed and the efficiency / losses measured in order to develo...

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Bibliographic Details
Main Authors:	Trentin, Andrew, De Lillo, Liliana, Empringham, Lee, Wheeler, Patrick, Clare, Jon C.
Format:	Article
Published:	IEEE 2015
Subjects:	IGBTs; MOSFETs; Matrix converter;insulated gate bipolar; transistors (IGBTs); matrix converter (MC)
Online Access:	https://eprints.nottingham.ac.uk/32152/

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