Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs
This paper presents an analytical and experimental comparison between comparable Silicon (Si) IGBTs and Silicon Carbide (SiC) MOSFETS when used in a direct AC/AC matrix converter circuit. The switching performance of the two devices is analysed and the efficiency / losses measured in order to develo...
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| Format: | Article |
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IEEE
2015
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| Online Access: | https://eprints.nottingham.ac.uk/32152/ |
| _version_ | 1848794345546711040 |
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| author | Trentin, Andrew De Lillo, Liliana Empringham, Lee Wheeler, Patrick Clare, Jon C. |
| author_facet | Trentin, Andrew De Lillo, Liliana Empringham, Lee Wheeler, Patrick Clare, Jon C. |
| author_sort | Trentin, Andrew |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | This paper presents an analytical and experimental comparison between comparable Silicon (Si) IGBTs and Silicon Carbide (SiC) MOSFETS when used in a direct AC/AC matrix converter circuit. The switching performance of the two devices is analysed and the efficiency / losses measured in order to develop a loss model which will help engineers to design and develop matrix converter circuits using these types of devices. Particular attention is given in the paper to the discrepancies found between the data-sheet values and the measured data. The EMI performance of the two matrix converters is also determined and the implication of using high speed devices from both an EMI and an efficiency point of view is formulated together with an improved input filter design. |
| first_indexed | 2025-11-14T19:14:43Z |
| format | Article |
| id | nottingham-32152 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:14:43Z |
| publishDate | 2015 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-321522020-05-04T20:08:38Z https://eprints.nottingham.ac.uk/32152/ Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs Trentin, Andrew De Lillo, Liliana Empringham, Lee Wheeler, Patrick Clare, Jon C. This paper presents an analytical and experimental comparison between comparable Silicon (Si) IGBTs and Silicon Carbide (SiC) MOSFETS when used in a direct AC/AC matrix converter circuit. The switching performance of the two devices is analysed and the efficiency / losses measured in order to develop a loss model which will help engineers to design and develop matrix converter circuits using these types of devices. Particular attention is given in the paper to the discrepancies found between the data-sheet values and the measured data. The EMI performance of the two matrix converters is also determined and the implication of using high speed devices from both an EMI and an efficiency point of view is formulated together with an improved input filter design. IEEE 2015-06 Article PeerReviewed Trentin, Andrew, De Lillo, Liliana, Empringham, Lee, Wheeler, Patrick and Clare, Jon C. (2015) Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics, 3 (2). pp. 542-554. ISSN 2168-6785 IGBTs; MOSFETs; Matrix converter;insulated gate bipolar; transistors (IGBTs); matrix converter (MC) http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6985581 doi:10.1109/JESTPE.2014.2381001 doi:10.1109/JESTPE.2014.2381001 |
| spellingShingle | IGBTs; MOSFETs; Matrix converter;insulated gate bipolar; transistors (IGBTs); matrix converter (MC) Trentin, Andrew De Lillo, Liliana Empringham, Lee Wheeler, Patrick Clare, Jon C. Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs |
| title | Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs |
| title_full | Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs |
| title_fullStr | Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs |
| title_full_unstemmed | Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs |
| title_short | Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs |
| title_sort | experimental comparison of a matrix converter using si igbt and sic mosfets |
| topic | IGBTs; MOSFETs; Matrix converter;insulated gate bipolar; transistors (IGBTs); matrix converter (MC) |
| url | https://eprints.nottingham.ac.uk/32152/ https://eprints.nottingham.ac.uk/32152/ https://eprints.nottingham.ac.uk/32152/ |