Growth and characterisation of III-V semiconductor materials grown primarily by AME and PA-MBE

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Growth and characterisation of III-V semiconductor materials grown primarily by AME and PA-MBE

This thesis describes the growth and characterisation of gallium nitride, indium nitride and indium gallium nitride semiconductors primarily carried out using a novel growth technique called Anion Modulation Epitaxy (AME) and also plasma-assisted MBE (PA-MBE). Characterisation was typically performe...

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Bibliographic Details
Main Author:	Goff, Lucy Elizabeth
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2015
Subjects:	MBE ; GaN ; Gallium Nitride ; Molecular Beam Epitaxy
Online Access:	https://eprints.nottingham.ac.uk/30204/

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