Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well
In this work, we have investigated magneto-transport and polarization resolved photoluminescence of a GaAs/AlGaAs resonant tunneling diode with Si delta-doping at the center of the quantum well under a magnetic field parallel to the tunnel current. Three resonant peaks were observed in the current-v...
| Main Authors: | , , , , , , |
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| Format: | Conference or Workshop Item |
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2014
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| Online Access: | https://eprints.nottingham.ac.uk/29568/ |
| _version_ | 1848793812253540352 |
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| author | Herval, L.K S. Galeti, H.V.A. Orsi Gordo, V. Galvao Gobato, Y. Brasil, M.J.S.P. Taylor, D. Henini, M. |
| author_facet | Herval, L.K S. Galeti, H.V.A. Orsi Gordo, V. Galvao Gobato, Y. Brasil, M.J.S.P. Taylor, D. Henini, M. |
| author_sort | Herval, L.K S. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | In this work, we have investigated magneto-transport and polarization resolved photoluminescence of a GaAs/AlGaAs resonant tunneling diode with Si delta-doping at the center of the quantum well under a magnetic field parallel to the tunnel current. Three resonant peaks were observed in the current-voltage characteristics curve (J(V)) which were associated to donor-assisted resonant tunneling, electron resonant tunneling and to phonon-assisted resonant tunneling. The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affect the spin-polarization of carriers in the well. The quantum well photoluminescence shows strong circular polarization degrees with values up to 85% under 15T at the donor assisted resonant tunneling peak voltage. Our results can be exploited for future development of voltage-controlled spintronics devices. |
| first_indexed | 2025-11-14T19:06:15Z |
| format | Conference or Workshop Item |
| id | nottingham-29568 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:06:15Z |
| publishDate | 2014 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-295682020-05-04T20:16:51Z https://eprints.nottingham.ac.uk/29568/ Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well Herval, L.K S. Galeti, H.V.A. Orsi Gordo, V. Galvao Gobato, Y. Brasil, M.J.S.P. Taylor, D. Henini, M. In this work, we have investigated magneto-transport and polarization resolved photoluminescence of a GaAs/AlGaAs resonant tunneling diode with Si delta-doping at the center of the quantum well under a magnetic field parallel to the tunnel current. Three resonant peaks were observed in the current-voltage characteristics curve (J(V)) which were associated to donor-assisted resonant tunneling, electron resonant tunneling and to phonon-assisted resonant tunneling. The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affect the spin-polarization of carriers in the well. The quantum well photoluminescence shows strong circular polarization degrees with values up to 85% under 15T at the donor assisted resonant tunneling peak voltage. Our results can be exploited for future development of voltage-controlled spintronics devices. 2014 Conference or Workshop Item PeerReviewed Herval, L.K S., Galeti, H.V.A., Orsi Gordo, V., Galvao Gobato, Y., Brasil, M.J.S.P., Taylor, D. and Henini, M. (2014) Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well. In: 29th Symposium on Microelectronics Technology and Devices (SBMicro) 2014, 1-5 September 2014, Aracaju-Sergipe, Brazil. spintronics nanostructure resonant tunneling diodes photoluminescence http://dx.doi.org/10.1109/SBMicro.2014.6940126 doi:10.1109/SBMicro.2014.6940126 doi:10.1109/SBMicro.2014.6940126 |
| spellingShingle | spintronics nanostructure resonant tunneling diodes photoluminescence Herval, L.K S. Galeti, H.V.A. Orsi Gordo, V. Galvao Gobato, Y. Brasil, M.J.S.P. Taylor, D. Henini, M. Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well |
| title | Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well |
| title_full | Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well |
| title_fullStr | Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well |
| title_full_unstemmed | Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well |
| title_short | Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well |
| title_sort | circular polarization in n-type resonant tunneling diodes with si delta-doping in the quantum well |
| topic | spintronics nanostructure resonant tunneling diodes photoluminescence |
| url | https://eprints.nottingham.ac.uk/29568/ https://eprints.nottingham.ac.uk/29568/ https://eprints.nottingham.ac.uk/29568/ |