High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures

We exploit the broad-band transparency of graphene and the favorable band line up of graphene with van der Waals InSe crystals to create new functional heterostructures and high-performance photodetectors. The InSe-graphene heterostructure exhibits a high photoresponsivity, which exceeds that for ot...

Full description

Bibliographic Details
Main Authors: Mudd, Garry W., Svatek, Simon A., Hague, Lee, Makarovsky, Oleg, Kudrynskyi, Zakhar R., Mellor, Christopher J., Beton, Peter H., Eaves, Laurence, Novoselov, Kostya S., Kovalyuk, Zakhar D., Vdovin, Evgeny E., Marsden, Alex J., Wilson, Neil R., Patanè, Amalia
Format: Article
Published: Wiley 2015
Subjects:
Online Access:https://eprints.nottingham.ac.uk/29314/
_version_ 1848793759331909632
author Mudd, Garry W.
Svatek, Simon A.
Hague, Lee
Makarovsky, Oleg
Kudrynskyi, Zakhar R.
Mellor, Christopher J.
Beton, Peter H.
Eaves, Laurence
Novoselov, Kostya S.
Kovalyuk, Zakhar D.
Vdovin, Evgeny E.
Marsden, Alex J.
Wilson, Neil R.
Patanè, Amalia
author_facet Mudd, Garry W.
Svatek, Simon A.
Hague, Lee
Makarovsky, Oleg
Kudrynskyi, Zakhar R.
Mellor, Christopher J.
Beton, Peter H.
Eaves, Laurence
Novoselov, Kostya S.
Kovalyuk, Zakhar D.
Vdovin, Evgeny E.
Marsden, Alex J.
Wilson, Neil R.
Patanè, Amalia
author_sort Mudd, Garry W.
building Nottingham Research Data Repository
collection Online Access
description We exploit the broad-band transparency of graphene and the favorable band line up of graphene with van der Waals InSe crystals to create new functional heterostructures and high-performance photodetectors. The InSe-graphene heterostructure exhibits a high photoresponsivity, which exceeds that for other two-dimensional van der Waals crystals, and a spectral response that extends from the near-infrared to the visible spectrum. The highest photoresponsivity is achieved in device architectures where the InSe and graphene layers are vertically stacked, thus enabling effective extraction of photogenerated carriers from the InSe to the graphene electrodes.
first_indexed 2025-11-14T19:05:24Z
format Article
id nottingham-29314
institution University of Nottingham Malaysia Campus
institution_category Local University
last_indexed 2025-11-14T19:05:24Z
publishDate 2015
publisher Wiley
recordtype eprints
repository_type Digital Repository
spelling nottingham-293142020-05-04T17:08:27Z https://eprints.nottingham.ac.uk/29314/ High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures Mudd, Garry W. Svatek, Simon A. Hague, Lee Makarovsky, Oleg Kudrynskyi, Zakhar R. Mellor, Christopher J. Beton, Peter H. Eaves, Laurence Novoselov, Kostya S. Kovalyuk, Zakhar D. Vdovin, Evgeny E. Marsden, Alex J. Wilson, Neil R. Patanè, Amalia We exploit the broad-band transparency of graphene and the favorable band line up of graphene with van der Waals InSe crystals to create new functional heterostructures and high-performance photodetectors. The InSe-graphene heterostructure exhibits a high photoresponsivity, which exceeds that for other two-dimensional van der Waals crystals, and a spectral response that extends from the near-infrared to the visible spectrum. The highest photoresponsivity is achieved in device architectures where the InSe and graphene layers are vertically stacked, thus enabling effective extraction of photogenerated carriers from the InSe to the graphene electrodes. Wiley 2015-05-15 Article PeerReviewed Mudd, Garry W., Svatek, Simon A., Hague, Lee, Makarovsky, Oleg, Kudrynskyi, Zakhar R., Mellor, Christopher J., Beton, Peter H., Eaves, Laurence, Novoselov, Kostya S., Kovalyuk, Zakhar D., Vdovin, Evgeny E., Marsden, Alex J., Wilson, Neil R. and Patanè, Amalia (2015) High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures. Advanced Materials, 27 (25). pp. 3760-3766. ISSN 0935-9648 InSe Graphene Photoresponsivity http://onlinelibrary.wiley.com/doi/10.1002/adma.201500889/full doi:10.1002/adma.201500889 doi:10.1002/adma.201500889
spellingShingle InSe
Graphene
Photoresponsivity
Mudd, Garry W.
Svatek, Simon A.
Hague, Lee
Makarovsky, Oleg
Kudrynskyi, Zakhar R.
Mellor, Christopher J.
Beton, Peter H.
Eaves, Laurence
Novoselov, Kostya S.
Kovalyuk, Zakhar D.
Vdovin, Evgeny E.
Marsden, Alex J.
Wilson, Neil R.
Patanè, Amalia
High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures
title High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures
title_full High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures
title_fullStr High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures
title_full_unstemmed High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures
title_short High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures
title_sort high broad-band photoresponsivity of mechanically formed inse-graphene van der waals heterostructures
topic InSe
Graphene
Photoresponsivity
url https://eprints.nottingham.ac.uk/29314/
https://eprints.nottingham.ac.uk/29314/
https://eprints.nottingham.ac.uk/29314/