Resonant tunnelling and negative differential conductance in graphene transistors

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Resonant tunnelling and negative differential conductance in graphene transistors

The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron...

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Bibliographic Details
Main Authors:	Britnell, L., Gorbachev, R.V., Geim, A.K., Ponomarenko, L.A., Mishchenko, A., Greenaway, M.T., Fromhold, T.M., Novoselov, K.S., Eaves, Laurence
Format:	Article
Published:	Nature Publishing Group 2013
Online Access:	https://eprints.nottingham.ac.uk/2756/

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