Resonant tunnelling and negative differential conductance in graphene transistors
The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Published: |
Nature Publishing Group
2013
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| Online Access: | https://eprints.nottingham.ac.uk/2756/ |
| _version_ | 1848790868168802304 |
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| author | Britnell, L. Gorbachev, R.V. Geim, A.K. Ponomarenko, L.A. Mishchenko, A. Greenaway, M.T. Fromhold, T.M. Novoselov, K.S. Eaves, Laurence |
| author_facet | Britnell, L. Gorbachev, R.V. Geim, A.K. Ponomarenko, L.A. Mishchenko, A. Greenaway, M.T. Fromhold, T.M. Novoselov, K.S. Eaves, Laurence |
| author_sort | Britnell, L. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonance occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance in the device characteristics persists up to room temperature and is gate voltage-tuneable due to graphene’s unique Dirac-like spectrum. Although conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices. |
| first_indexed | 2025-11-14T18:19:27Z |
| format | Article |
| id | nottingham-2756 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T18:19:27Z |
| publishDate | 2013 |
| publisher | Nature Publishing Group |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-27562020-05-04T16:36:13Z https://eprints.nottingham.ac.uk/2756/ Resonant tunnelling and negative differential conductance in graphene transistors Britnell, L. Gorbachev, R.V. Geim, A.K. Ponomarenko, L.A. Mishchenko, A. Greenaway, M.T. Fromhold, T.M. Novoselov, K.S. Eaves, Laurence The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonance occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance in the device characteristics persists up to room temperature and is gate voltage-tuneable due to graphene’s unique Dirac-like spectrum. Although conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices. Nature Publishing Group 2013-04-30 Article PeerReviewed Britnell, L., Gorbachev, R.V., Geim, A.K., Ponomarenko, L.A., Mishchenko, A., Greenaway, M.T., Fromhold, T.M., Novoselov, K.S. and Eaves, Laurence (2013) Resonant tunnelling and negative differential conductance in graphene transistors. Nature Communications, 4 . 1794/1-1794/5. http://www.nature.com/ncomms/journal/v4/n4/full/ncomms2817.html doi:10.1038/ncomms2817 doi:10.1038/ncomms2817 |
| spellingShingle | Britnell, L. Gorbachev, R.V. Geim, A.K. Ponomarenko, L.A. Mishchenko, A. Greenaway, M.T. Fromhold, T.M. Novoselov, K.S. Eaves, Laurence Resonant tunnelling and negative differential conductance in graphene transistors |
| title | Resonant tunnelling and negative differential conductance in graphene transistors |
| title_full | Resonant tunnelling and negative differential conductance in graphene transistors |
| title_fullStr | Resonant tunnelling and negative differential conductance in graphene transistors |
| title_full_unstemmed | Resonant tunnelling and negative differential conductance in graphene transistors |
| title_short | Resonant tunnelling and negative differential conductance in graphene transistors |
| title_sort | resonant tunnelling and negative differential conductance in graphene transistors |
| url | https://eprints.nottingham.ac.uk/2756/ https://eprints.nottingham.ac.uk/2756/ https://eprints.nottingham.ac.uk/2756/ |