Structural characterisation of MBE grown zinc-blende
Ga1-xMnxN/GaAs(001) as a function of Ga flux

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Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux

Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth with surface Ga droplets for high Ga flux (Ga-ric...

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Bibliographic Details
Main Authors:	Han, Y., Fay, Mike W., Brown, Paul D., Novikov, Sergei V., Edmonds, K.W., Gallagher, B.L., Campion, R.P., Foxon, C.T.
Other Authors:	Cullis, A.G.
Format:	Book Section
Published:	Springer-Verlag 2005
Subjects:	TEM spintronics GaMnN MBE
Online Access:	https://eprints.nottingham.ac.uk/1470/

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