Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux

Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth with surface Ga droplets for high Ga flux (Ga-ric...

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Main Authors: Han, Y., Fay, Mike W., Brown, Paul D., Novikov, Sergei V., Edmonds, K.W., Gallagher, B.L., Campion, R.P., Foxon, C.T.
Other Authors: Cullis, A.G.
Format: Book Section
Published: Springer-Verlag 2005
Subjects:
Online Access:https://eprints.nottingham.ac.uk/1470/
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author Han, Y.
Fay, Mike W.
Brown, Paul D.
Novikov, Sergei V.
Edmonds, K.W.
Gallagher, B.L.
Campion, R.P.
Foxon, C.T.
author2 Cullis, A.G.
author_facet Cullis, A.G.
Han, Y.
Fay, Mike W.
Brown, Paul D.
Novikov, Sergei V.
Edmonds, K.W.
Gallagher, B.L.
Campion, R.P.
Foxon, C.T.
author_sort Han, Y.
building Nottingham Research Data Repository
collection Online Access
description Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth with surface Ga droplets for high Ga flux (Ga-rich conditions). N-rich conditions were found favourable for Mn incorporation in GaN lattice. α-MnAs inclusions were identified extending into the GaAs buffer layer.
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institution University of Nottingham Malaysia Campus
institution_category Local University
last_indexed 2025-11-14T18:15:24Z
publishDate 2005
publisher Springer-Verlag
recordtype eprints
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spelling nottingham-14702020-05-04T20:30:51Z https://eprints.nottingham.ac.uk/1470/ Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux Han, Y. Fay, Mike W. Brown, Paul D. Novikov, Sergei V. Edmonds, K.W. Gallagher, B.L. Campion, R.P. Foxon, C.T. Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth with surface Ga droplets for high Ga flux (Ga-rich conditions). N-rich conditions were found favourable for Mn incorporation in GaN lattice. α-MnAs inclusions were identified extending into the GaAs buffer layer. Springer-Verlag Cullis, A.G. Hutchison, J.L. 2005 Book Section PeerReviewed Han, Y., Fay, Mike W., Brown, Paul D., Novikov, Sergei V., Edmonds, K.W., Gallagher, B.L., Campion, R.P. and Foxon, C.T. (2005) Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux. In: Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer proceedings in physics (107). Springer-Verlag, Berlin, pp. 155-158. ISBN 9783540319146 TEM spintronics GaMnN MBE http://www.springer.com/materials/book/978-3-540-31914-6
spellingShingle TEM
spintronics
GaMnN
MBE
Han, Y.
Fay, Mike W.
Brown, Paul D.
Novikov, Sergei V.
Edmonds, K.W.
Gallagher, B.L.
Campion, R.P.
Foxon, C.T.
Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux
title Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux
title_full Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux
title_fullStr Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux
title_full_unstemmed Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux
title_short Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux
title_sort structural characterisation of mbe grown zinc-blende ga1-xmnxn/gaas(001) as a function of ga flux
topic TEM
spintronics
GaMnN
MBE
url https://eprints.nottingham.ac.uk/1470/
https://eprints.nottingham.ac.uk/1470/