Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux
Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth with surface Ga droplets for high Ga flux (Ga-ric...
| Main Authors: | , , , , , , , |
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| Format: | Book Section |
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Springer-Verlag
2005
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| Online Access: | https://eprints.nottingham.ac.uk/1470/ |
| _version_ | 1848790613172944896 |
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| author | Han, Y. Fay, Mike W. Brown, Paul D. Novikov, Sergei V. Edmonds, K.W. Gallagher, B.L. Campion, R.P. Foxon, C.T. |
| author2 | Cullis, A.G. |
| author_facet | Cullis, A.G. Han, Y. Fay, Mike W. Brown, Paul D. Novikov, Sergei V. Edmonds, K.W. Gallagher, B.L. Campion, R.P. Foxon, C.T. |
| author_sort | Han, Y. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth with surface Ga droplets for high Ga flux (Ga-rich conditions). N-rich conditions were found favourable for Mn incorporation in GaN lattice. α-MnAs inclusions were identified extending into the GaAs buffer layer. |
| first_indexed | 2025-11-14T18:15:24Z |
| format | Book Section |
| id | nottingham-1470 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T18:15:24Z |
| publishDate | 2005 |
| publisher | Springer-Verlag |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-14702020-05-04T20:30:51Z https://eprints.nottingham.ac.uk/1470/ Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux Han, Y. Fay, Mike W. Brown, Paul D. Novikov, Sergei V. Edmonds, K.W. Gallagher, B.L. Campion, R.P. Foxon, C.T. Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth with surface Ga droplets for high Ga flux (Ga-rich conditions). N-rich conditions were found favourable for Mn incorporation in GaN lattice. α-MnAs inclusions were identified extending into the GaAs buffer layer. Springer-Verlag Cullis, A.G. Hutchison, J.L. 2005 Book Section PeerReviewed Han, Y., Fay, Mike W., Brown, Paul D., Novikov, Sergei V., Edmonds, K.W., Gallagher, B.L., Campion, R.P. and Foxon, C.T. (2005) Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux. In: Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer proceedings in physics (107). Springer-Verlag, Berlin, pp. 155-158. ISBN 9783540319146 TEM spintronics GaMnN MBE http://www.springer.com/materials/book/978-3-540-31914-6 |
| spellingShingle | TEM spintronics GaMnN MBE Han, Y. Fay, Mike W. Brown, Paul D. Novikov, Sergei V. Edmonds, K.W. Gallagher, B.L. Campion, R.P. Foxon, C.T. Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux |
| title | Structural characterisation of MBE grown zinc-blende
Ga1-xMnxN/GaAs(001) as a function of Ga flux |
| title_full | Structural characterisation of MBE grown zinc-blende
Ga1-xMnxN/GaAs(001) as a function of Ga flux |
| title_fullStr | Structural characterisation of MBE grown zinc-blende
Ga1-xMnxN/GaAs(001) as a function of Ga flux |
| title_full_unstemmed | Structural characterisation of MBE grown zinc-blende
Ga1-xMnxN/GaAs(001) as a function of Ga flux |
| title_short | Structural characterisation of MBE grown zinc-blende
Ga1-xMnxN/GaAs(001) as a function of Ga flux |
| title_sort | structural characterisation of mbe grown zinc-blende
ga1-xmnxn/gaas(001) as a function of ga flux |
| topic | TEM spintronics GaMnN MBE |
| url | https://eprints.nottingham.ac.uk/1470/ https://eprints.nottingham.ac.uk/1470/ |