Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux

Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux

Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth with surface Ga droplets for high Ga flux (Ga-ric...

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Bibliographic Details
Main Authors: Han, Y., Fay, Mike W., Brown, Paul D., Novikov, Sergei V., Edmonds, K.W., Gallagher, B.L., Campion, R.P., Foxon, C.T.
Other Authors: Cullis, A.G.
Format: Book Section
Published: Springer-Verlag 2005
Subjects:
TEM
spintronics
GaMnN
MBE
Online Access:https://eprints.nottingham.ac.uk/1470/
Description
Summary:Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth with surface Ga droplets for high Ga flux (Ga-rich conditions). N-rich conditions were found favourable for Mn incorporation in GaN lattice. α-MnAs inclusions were identified extending into the GaAs buffer layer.

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