Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy
Observations of orthogonal orientations demonstrate the development of banded contrast features on inclined {-1-1-1}B planes for the [110] projection within micron thick samples, attributed to a compositional fluctuation in the Mn content. The relationship of Mn content and layer critical thickness...
| Main Authors: | , , , , , , , , |
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| Format: | Book Section |
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Springer-Verlag
2005
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| Online Access: | https://eprints.nottingham.ac.uk/1469/ |
| _version_ | 1848790612873052160 |
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| author | Fay, Mike W. Han, Y. Novikov, Sergei V. Edmonds, K.W. Wang, K. Gallagher, B.L. Campion, R.P. Foxon, C.T. Brown, Paul D. |
| author2 | Cullis, A.G. |
| author_facet | Cullis, A.G. Fay, Mike W. Han, Y. Novikov, Sergei V. Edmonds, K.W. Wang, K. Gallagher, B.L. Campion, R.P. Foxon, C.T. Brown, Paul D. |
| author_sort | Fay, Mike W. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Observations of orthogonal orientations demonstrate the development of banded contrast features on inclined {-1-1-1}B planes for the [110] projection within micron thick samples, attributed to a compositional fluctuation in the Mn content. The relationship of Mn content and layer critical thickness for the onset of precipitate and stacking fault formation is investigated. The formation of a Mn-O layer at the surface of the samples is also observed. The growth of GaMnN/(001)GaAs heterostructures with and without AlN/GaN buffer layers is also compared. Layers without buffer layers show MnAs inclusions into the GaAs, with a reduced Mn content of the GaMnN layer significantly below the nominal composition. The use of AlN/GaN buffer layers is found to greatly reduce the density of these MnAs inclusions, retaining a higher proportion of the Mn within the epilayer. |
| first_indexed | 2025-11-14T18:15:23Z |
| format | Book Section |
| id | nottingham-1469 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T18:15:23Z |
| publishDate | 2005 |
| publisher | Springer-Verlag |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-14692020-05-04T20:30:49Z https://eprints.nottingham.ac.uk/1469/ Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy Fay, Mike W. Han, Y. Novikov, Sergei V. Edmonds, K.W. Wang, K. Gallagher, B.L. Campion, R.P. Foxon, C.T. Brown, Paul D. Observations of orthogonal orientations demonstrate the development of banded contrast features on inclined {-1-1-1}B planes for the [110] projection within micron thick samples, attributed to a compositional fluctuation in the Mn content. The relationship of Mn content and layer critical thickness for the onset of precipitate and stacking fault formation is investigated. The formation of a Mn-O layer at the surface of the samples is also observed. The growth of GaMnN/(001)GaAs heterostructures with and without AlN/GaN buffer layers is also compared. Layers without buffer layers show MnAs inclusions into the GaAs, with a reduced Mn content of the GaMnN layer significantly below the nominal composition. The use of AlN/GaN buffer layers is found to greatly reduce the density of these MnAs inclusions, retaining a higher proportion of the Mn within the epilayer. Springer-Verlag Cullis, A.G. Hutchison, A.L. 2005 Book Section PeerReviewed Fay, Mike W., Han, Y., Novikov, Sergei V., Edmonds, K.W., Wang, K., Gallagher, B.L., Campion, R.P., Foxon, C.T. and Brown, Paul D. (2005) Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy. In: Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer proceedings in physics (107). Springer-Verlag, Berlin, pp. 143-146. ISBN 9783540319146 TEM spintronics GaMnAs GaMnN MBE http://www.springer.com/materials/book/978-3-540-31914-6 |
| spellingShingle | TEM spintronics GaMnAs GaMnN MBE Fay, Mike W. Han, Y. Novikov, Sergei V. Edmonds, K.W. Wang, K. Gallagher, B.L. Campion, R.P. Foxon, C.T. Brown, Paul D. Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy |
| title | Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy |
| title_full | Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy |
| title_fullStr | Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy |
| title_full_unstemmed | Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy |
| title_short | Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy |
| title_sort | structural characterisation of spintronic gamnas and gamnn heterostructures grown by molecular beam epitaxy |
| topic | TEM spintronics GaMnAs GaMnN MBE |
| url | https://eprints.nottingham.ac.uk/1469/ https://eprints.nottingham.ac.uk/1469/ |