TEM assessment of As-doped GaN epitaxial layers grown on sapphire

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TEM assessment of As-doped GaN epitaxial layers grown on sapphire

TEM investigations of As-doped GaN layers grown by plasma-assisted molecular beam epitaxy on sapphire substrates reveal the presence of extensive regions of cubic stacking disorder within the hexagonal GaN matrix. Electron energy loss spectroscopy suggests the localization of As within grains immedi...

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Bibliographic Details
Main Authors:	Fay, Mike W., Harrison, Ian, Larkins, Eric C., Novikov, Sergei V., Foxon, C.T., Brown, Paul D.
Other Authors:	McVitie, Stephen
Format:	Book Section
Published:	Institute of Physics Publishing 2004
Subjects:	EELS TEM GaN Epitaxy Doping PAMBE
Online Access:	https://eprints.nottingham.ac.uk/1442/

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