TEM assessment of As-doped GaN epitaxial layers grown on sapphire
TEM investigations of As-doped GaN layers grown by plasma-assisted molecular beam epitaxy on sapphire substrates reveal the presence of extensive regions of cubic stacking disorder within the hexagonal GaN matrix. Electron energy loss spectroscopy suggests the localization of As within grains immedi...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Book Section |
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Institute of Physics Publishing
2004
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| Online Access: | https://eprints.nottingham.ac.uk/1442/ |
| _version_ | 1848790606662336512 |
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| author | Fay, Mike W. Harrison, Ian Larkins, Eric C. Novikov, Sergei V. Foxon, C.T. Brown, Paul D. |
| author2 | McVitie, Stephen |
| author_facet | McVitie, Stephen Fay, Mike W. Harrison, Ian Larkins, Eric C. Novikov, Sergei V. Foxon, C.T. Brown, Paul D. |
| author_sort | Fay, Mike W. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | TEM investigations of As-doped GaN layers grown by plasma-assisted molecular beam epitaxy on sapphire substrates reveal the presence of extensive regions of cubic stacking disorder within the hexagonal GaN matrix. Electron energy loss spectroscopy suggests the localization of As within grains immediately below domains containing stacking disorder, and additionally at the layer surface. This suggests that localised strain plays a role in the formation mechanism of the stacking faults. |
| first_indexed | 2025-11-14T18:15:17Z |
| format | Book Section |
| id | nottingham-1442 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T18:15:17Z |
| publishDate | 2004 |
| publisher | Institute of Physics Publishing |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-14422020-05-04T20:31:28Z https://eprints.nottingham.ac.uk/1442/ TEM assessment of As-doped GaN epitaxial layers grown on sapphire Fay, Mike W. Harrison, Ian Larkins, Eric C. Novikov, Sergei V. Foxon, C.T. Brown, Paul D. TEM investigations of As-doped GaN layers grown by plasma-assisted molecular beam epitaxy on sapphire substrates reveal the presence of extensive regions of cubic stacking disorder within the hexagonal GaN matrix. Electron energy loss spectroscopy suggests the localization of As within grains immediately below domains containing stacking disorder, and additionally at the layer surface. This suggests that localised strain plays a role in the formation mechanism of the stacking faults. Institute of Physics Publishing McVitie, Stephen McComb, David 2004 Book Section PeerReviewed Fay, Mike W., Harrison, Ian, Larkins, Eric C., Novikov, Sergei V., Foxon, C.T. and Brown, Paul D. (2004) TEM assessment of As-doped GaN epitaxial layers grown on sapphire. In: Electron Microscopy and Analysis 2003: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003. Institute of Physics conference series (179). Institute of Physics Publishing, Bristol, pp. 23-26. ISBN 0750309679 EELS TEM GaN Epitaxy Doping PAMBE |
| spellingShingle | EELS TEM GaN Epitaxy Doping PAMBE Fay, Mike W. Harrison, Ian Larkins, Eric C. Novikov, Sergei V. Foxon, C.T. Brown, Paul D. TEM assessment of As-doped GaN epitaxial layers grown on sapphire |
| title | TEM assessment of As-doped GaN epitaxial layers grown on sapphire |
| title_full | TEM assessment of As-doped GaN epitaxial layers grown on sapphire |
| title_fullStr | TEM assessment of As-doped GaN epitaxial layers grown on sapphire |
| title_full_unstemmed | TEM assessment of As-doped GaN epitaxial layers grown on sapphire |
| title_short | TEM assessment of As-doped GaN epitaxial layers grown on sapphire |
| title_sort | tem assessment of as-doped gan epitaxial layers grown on sapphire |
| topic | EELS TEM GaN Epitaxy Doping PAMBE |
| url | https://eprints.nottingham.ac.uk/1442/ |