Electrical charactrization of III-V antimonide/GaAs heterostuctures grown by Interfacial Misfit molecular beam epitaxy technique

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Electrical charactrization of III-V antimonide/GaAs heterostuctures grown by Interfacial Misfit molecular beam epitaxy technique

Lattice mismatched heterostructures grown by Interfacial Misfit (IMF) technique, which allows the strain energy to be relieved both laterally and perpendicularly from the interfaces, are investigated. However, electrically active defects are created at the interface and away from the interface with...

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Bibliographic Details
Main Author:	Aziz, Mohsin
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2014
Online Access:	https://eprints.nottingham.ac.uk/14287/

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