The electron-phonon interaction in a two dimensional electron gas

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The electron-phonon interaction in a two dimensional electron gas

At low temperatures the predominant energy loss mechanism for a Joule-heated two dimensional electron gas (2DEG) in a metal oxide semiconductor field effect transistor (MOSFET) is by acoustic phonon emission. By very accurately measuring the temperature gradient developed along the silicon substrat...

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Bibliographic Details
Main Author:	Hewett, Nicholas Peter
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	1988
Online Access:	https://eprints.nottingham.ac.uk/14218/

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