Experimental studies of electron-phonon interactions in gallium nitride

QR Code

Experimental studies of electron-phonon interactions in gallium nitride

This thesis presents an experimental investigation of the electron-phonon interaction in GaN. Bulk epilayers, grown by MBE, and AIGaN/GaN heterostructures, grown by MOCVD, have been studied. The energy relaxation rate for hot electrons has been measured over a wide range of temperatures, allowing bo...

Full description

Bibliographic Details
Main Author:	Stanton, Nicola Marie
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2001
Online Access:	https://eprints.nottingham.ac.uk/14212/

Similar Items

Gallium nitride nanowires
by: Stampfl, C., et al.
Published: (2010)

Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
by: Vdovin, Evgeny E., et al.
Published: (2016)

Phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors
by: Vdovin, Evgeny E., et al.
Published: (2016)

Growth of Gallium Nitride (GaN) on Aluminium Nitride Surfaces Grown by Electron-Beam Evaporator
by: Fikri, Z. M., et al.
Published: (2015)

The electron-phonon interaction in a two dimensional electron gas
by: Hewett, Nicholas Peter
Published: (1988)

Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation
by: Hedzir, Anati Syahirah, et al.
Published: (2016)

The interaction of coherent acoustic phonons with electrons in semiconductor superlattices
by: Poyser, Caroline Louise
Published: (2015)

Design And Experimental Studies Of Multilayer Coating For Applications In Gallium Nitride Light Emitting Devices
by: Ahmed, Naser Mahmoud
Published: (2006)

Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation
by: Abdullah, Yusof, et al.
Published: (2019)

Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes
by: Hedzir, Anati Syahirah, et al.
Published: (2019)

The electron-phonon interaction in GaAs/(AlGa)As quantum wells
by: Cross, Andrew John
Published: (2001)

Indium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate
by: Alias, Ezzah Azimah
Published: (2024)

Growth of gallium nitride thin film with the aid of polymethyl methacrylate
by: C.Y., Fong, et al.
Published: (2014)

Ohmic contact formation of gallium nitride and electrical properties improvement
by: Aiman, Mohd Halil
Published: (2016)

Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate
by: Samsudin, Muhammad Esmed Alif
Published: (2016)

Fabrication Of Gallium Nitride Nanowires Via Chemical Vapour Deposition
by: Low, Li Li
Published: (2012)

Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates
by: Fong, Chee Yong
Published: (2016)

Gallium Nitride (Gan) Based Gas Sensor Using Catalytic Metal
by: Hudeish, Abdo Yahya Omer
Published: (2005)

Quantum confinement effects in Gallium Nitride nanostructures: Ab initio investigations
by: Carter, Damien, et al.
Published: (2009)

Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications
by: Nor Zaihar, Yahaya, et al.
Published: (2009)

Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process
by: Cheah , Sook Fong
Published: (2015)

Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
by: Al-Heuseen, Khalled Mhammad Kallef
Published: (2011)

Fabrication Of Deep Green Light Emitting Diode On Bulk Gallium Nitride Substrate
by: Rais, Shamsul Amir Abdul, et al.
Published: (2019)

Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance
by: Li, Ke, et al.
Published: (2017)

Characterisation and modeling of Gallium nitride power semiconductor devices dynamic on-state resistance
by: Li, Ke, et al.
Published: (2018)

Electron scattering from atomic gallium
by: Fursa, Dmitry, et al.
Published: (2009)

Enhancing of optic phonon contribution in hydrodynamic phonon transport
by: de Tomas, Carla Mercedes, et al.
Published: (2015)

Electronic structure simulation of gallium arsenide clusters
by: Musa, Nor Muniroh
Published: (2009)

Fabrication and Characterization of Copper Doped Zinc Oxide on p-type and ntype Gallium Nitride by Sputtering
by: Yusof, Ahmad Sauffi, et al.
Published: (2016)

Microwave Activation Of Sol-Gel Spin Coated Magnesium Doped Gallium Nitride Thin Films
by: Sekaran, Vinoshni, et al.
Published: (2017)

Decoherence of phonons in weakly and strongly-interacting Bose-Einstein condensates
by: Howl, R.
Published: (2016)

Electron–phonon interaction in Gd1- xCaxBaSrCu3O7-8 superconductors
by: Chong, T.V., et al.
Published: (2012)

Aluminium nitride (AlN) as buffer layer for deposition of gallium nitride (GaN) thin films on silicon substrates using magnetron sputtering technique
by: Tahan, Muliana
Published: (2021)

Effects Of Different Amounts Of Surfactant On Characteristics Of Sol-Gel Dip Coated Gallium Nitride Thin Films
by: Hamid, Maizatul Akmam Ab, et al.
Published: (2019)

Design And Experimental Studies Of Multilayer Coatings For Applications In Gallium Nitride Light Emitting Devices [TK7871.89.L53 N247 2006 f rb].
by: Ahmed, Naser Mahmoud
Published: (2006)

Direct observation of phonon emission from hot electrons: spectral features in diamond secondary electron emission
by: O'Donnell, Kane, et al.
Published: (2014)

Electron-phonon interaction in Gd 1-xCa xBaSrCu 3O 7-δ superconductors
by: Chong, T.V., et al.
Published: (2012)

Design of silicon nitride metal-insulator-metal capacitor using 0.15 um gallium arsenide technology
by: Sanusi, Rasidah
Published: (2010)

Low-cost Growth of Magnesium Doped Gallium Nitride Thin Films by Sol-Gel Spin Coating Method
by: Sha, Shiong Ng, et al.
Published: (2017)

Phonon scattering by impurities in semiconductors
by: Ramdane, Abderrahim
Published: (1980)