DLTS characterisation of defects in III-V compound semiconductors grown by MBE

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DLTS characterisation of defects in III-V compound semiconductors grown by MBE

The interest in the growth of III-V compound semiconductors such as GaAs and AlGaAs on high index planes has increased tremendously over the last few years. The structural, optical and electrical properties III-V based structures are found to improve by, growing on (nil) planes. For example the amph...

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Bibliographic Details
Main Author:	Mari, Ruaz Hussain
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2011
Online Access:	https://eprints.nottingham.ac.uk/14211/

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