Optical properties of nanostructured semiconductors grown by MBE on non-conventional GaAs substrates
This thesis reports the optical properties of InAlAs QDs and InGaAsN QWs grown by Molecular Beam Epitaxy (MBE) on both the conventional (100) and high Miller index surfaces. InAlAs QDs on AlGaAs matrix are grown by MBE on the conventional (100) and non-(100) GaAs substrates using different growth c...
| Main Author: | Khatab, Almontaser bellah Fathy |
|---|---|
| Format: | Thesis (University of Nottingham only) |
| Language: | English |
| Published: |
2014
|
| Online Access: | https://eprints.nottingham.ac.uk/14062/ |
Similar Items
Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs
by: Fay, Mike W., et al.
Published: (2008)
by: Fay, Mike W., et al.
Published: (2008)
Structural characterisation of MBE grown zinc-blende
Ga1-xMnxN/GaAs(001) as a function of Ga flux
by: Han, Y., et al.
Published: (2005)
by: Han, Y., et al.
Published: (2005)
Light absorption and reflection in nanostructured GaAs metal-semiconductor-metal photodetectors
by: Das, Narottam, et al.
Published: (2014)
by: Das, Narottam, et al.
Published: (2014)
Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates
by: Prando, G.A., et al.
Published: (2018)
by: Prando, G.A., et al.
Published: (2018)
Electrical properties of sulfonated polyaniline (Span) and polyaniline (Pani) polymers grown on conventional and high index GaAs substrates
by: Jameel, Dler Adil
Published: (2016)
by: Jameel, Dler Adil
Published: (2016)
Microstructural characterisation of GaMnN ferromagnetic semiconductors grown on (001) oriented GaAs substrates by plasma assisted molecular beam epitaxy
by: Han, Yisong
Published: (2006)
by: Han, Yisong
Published: (2006)
Optical and structural properties of GaAsBi and InGaBiAs nanostructured semiconductors grown by Molecular Beam Epitaxy
by: Alghamdi, Haifa
Published: (2020)
by: Alghamdi, Haifa
Published: (2020)
Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations
by: Jameel, D.A., et al.
Published: (2016)
by: Jameel, D.A., et al.
Published: (2016)
PA-MBE GaN-Based Optoelectronics on Silicon Substrates
by: Chuah , Lee Siang
Published: (2009)
by: Chuah , Lee Siang
Published: (2009)
DLTS characterisation of defects in III-V compound semiconductors grown by MBE
by: Mari, Ruaz Hussain
Published: (2011)
by: Mari, Ruaz Hussain
Published: (2011)
Investigation of Structural and Optical Properties of Dilute GaAsBi and InGaAsBi Semiconductor Nanostructures Grown by Molecular Beam Epitaxy
by: Alhassni, Amra
Published: (2023)
by: Alhassni, Amra
Published: (2023)
Non-equilibrium critical point in Be-doped low-temperature-grown GaAs
by: Mohamed, Mohd Ambri, et al.
Published: (2013)
by: Mohamed, Mohd Ambri, et al.
Published: (2013)
Growth and characterisation of III-V semiconductor materials grown primarily by AME and PA-MBE
by: Goff, Lucy Elizabeth
Published: (2015)
by: Goff, Lucy Elizabeth
Published: (2015)
Growth parameters of InAs/GaAs quantum dots grown by MOVPE
by: Roslan, Sharizar, et al.
Published: (2006)
by: Roslan, Sharizar, et al.
Published: (2006)
Structural and Optical Properties of Diluted Magnetic Ga1−xMnxAs–AlAs Quantum Wells Grown on High-Index GaAs Planes
by: Gunes, Mustafa, et al.
Published: (2017)
by: Gunes, Mustafa, et al.
Published: (2017)
High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors
by: Karar, A., et al.
Published: (2011)
by: Karar, A., et al.
Published: (2011)
Density functional calculation for electronic structure properties of graphene adsorbed with GaAs nanostructure
by: Abubakar, Shamsu
Published: (2014)
by: Abubakar, Shamsu
Published: (2014)
STRUCTURAL AND OPTICAL PROPERTIES OF GaAs1-xBix/AlyGa1-yAs QUANTUM WELL HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY
by: Almunyif, Amjad
Published: (2024)
by: Almunyif, Amjad
Published: (2024)
Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.
by: Zainal, Norzaini
Published: (2016)
by: Zainal, Norzaini
Published: (2016)
Transition of electron transport process in Be-doped low-temperature-grown GaAs layer
by: Mohamed, Mohd Ambri, et al.
Published: (2013)
by: Mohamed, Mohd Ambri, et al.
Published: (2013)
Quantitative estimates of the variations of refractive index and gain with carrier density in GaAs/GaAIAs semiconductor injection lasers
by: Poh, B. S.
Published: (1984)
by: Poh, B. S.
Published: (1984)
Initial stages of GaAs/Au eutectic alloy formation for the growth of GaAs nanowires
by: Rosnita, M, et al.
Published: (2012)
by: Rosnita, M, et al.
Published: (2012)
Fabrication And Characterization Of Gan
Grown On Cubic Si (100) And Gaas (001)
Substrates
by: Mohmad Zaini, Siti Nurul Waheeda
Published: (2015)
by: Mohmad Zaini, Siti Nurul Waheeda
Published: (2015)
Distribution of ga vacancies in Zn diffused GaAs
by: Zahari Mohamed Darus,, et al.
Published: (1992)
by: Zahari Mohamed Darus,, et al.
Published: (1992)
Doping effect numerical comparison of band gap energy and active
region range for GaN and GaAs based semiconductor
by: Faris Azim Ahmad Fajri, Faris Azim, et al.
Published: (2021)
by: Faris Azim Ahmad Fajri, Faris Azim, et al.
Published: (2021)
Graphene grown on hBN by MBE and the deposition of hexacontane on hBN
by: Diez Albar, Juan
Published: (2020)
by: Diez Albar, Juan
Published: (2020)
Studies of self-assembled metal-organic nanostructures and the MBE growth of graphene
by: Summerfield, Alex
Published: (2016)
by: Summerfield, Alex
Published: (2016)
Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers
by: Mohamed, Mohd Ambri, et al.
Published: (2011)
by: Mohamed, Mohd Ambri, et al.
Published: (2011)
Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers
by: Mohamed, Mohd Ambri, et al.
Published: (2013)
by: Mohamed, Mohd Ambri, et al.
Published: (2013)
InAs/GaAs quantum dots grown by metal organic chemical vapor deposition at different temperatures
by: Muhammad, Rosnita, et al.
Published: (2008)
by: Muhammad, Rosnita, et al.
Published: (2008)
Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings
by: Hodgson, Peter D., et al.
Published: (2013)
by: Hodgson, Peter D., et al.
Published: (2013)
Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources
by: Novikov, Sergei V., et al.
Published: (2017)
by: Novikov, Sergei V., et al.
Published: (2017)
RF-MBE Grown III-Nitrides Heterostructures For Hydrogen Gas Sensing Applications
by: CHIN, CHE WOEI
Published: (2017)
by: CHIN, CHE WOEI
Published: (2017)
Self-healing in fractured GaAs nanowires
by: Wang, Jun, et al.
Published: (2012)
by: Wang, Jun, et al.
Published: (2012)
Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator
by: Taib, M. lkram Md, et al.
Published: (2015)
by: Taib, M. lkram Md, et al.
Published: (2015)
The electron-phonon interaction in GaAs/(AlGa)As quantum wells
by: Cross, Andrew John
Published: (2001)
by: Cross, Andrew John
Published: (2001)
Electrical charactrization of III-V antimonide/GaAs heterostuctures grown by Interfacial Misfit molecular beam epitaxy technique
by: Aziz, Mohsin
Published: (2014)
by: Aziz, Mohsin
Published: (2014)
Experimental Study Of InGaP/GaAs DHBTS With Composite Collector
by: Poh, Zi-Song
Published: (2009)
by: Poh, Zi-Song
Published: (2009)
Conversion Efficiency Improvement in GaAs Solar Cells
by: Das, Narottam, et al.
Published: (2014)
by: Das, Narottam, et al.
Published: (2014)
Self-healing of GaAs nanowires: An atomistic study
by: Wang, Jun, et al.
Published: (2012)
by: Wang, Jun, et al.
Published: (2012)
Similar Items
-
Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs
by: Fay, Mike W., et al.
Published: (2008) -
Structural characterisation of MBE grown zinc-blende
Ga1-xMnxN/GaAs(001) as a function of Ga flux
by: Han, Y., et al.
Published: (2005) -
Light absorption and reflection in nanostructured GaAs metal-semiconductor-metal photodetectors
by: Das, Narottam, et al.
Published: (2014) -
Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates
by: Prando, G.A., et al.
Published: (2018) -
Electrical properties of sulfonated polyaniline (Span) and polyaniline (Pani) polymers grown on conventional and high index GaAs substrates
by: Jameel, Dler Adil
Published: (2016)