An investigation of dielectric tunable materials for microwave tunable devices

Today, many of the communication systems are operated in several different bandwidths. Till now, the common solution to get a multi bandwidth transmitter/receiver is to insert several fixed microwave devices with different bandwidth to the required standard. This increases the size and power consump...

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Main Author: Xiao, Li
Format: Thesis (University of Nottingham only)
Language:English
Published: 2011
Subjects:
Online Access:https://eprints.nottingham.ac.uk/12754/
_version_ 1848791573309947904
author Xiao, Li
author_facet Xiao, Li
author_sort Xiao, Li
building Nottingham Research Data Repository
collection Online Access
description Today, many of the communication systems are operated in several different bandwidths. Till now, the common solution to get a multi bandwidth transmitter/receiver is to insert several fixed microwave devices with different bandwidth to the required standard. This increases the size and power consumption of trans/receiver. One solution is to develop electronically tunable microwave devices. By replacing several fixed microwave devices with a single electronically tunable device, the size and power consumptions of the transmitter/receiver can be significantly reduced. The tunable devices are usually implemented by high permittivity tunable materials that exhibit a change of dielectric constant with respect to a DC electric field. In this work, two different types of tunable materials: ferroelectric Barium Strontium Titanate (BST) Oxide and pyrochloe Bismuth Zinc Niobate Oxide (BZN) thin films are investigated. A simple and cost effective chemical solution deposition (CSD) method has been used to prepare the thin films. In addition, two different types of microwave devices (coplanar waveguide and metal insulated metal capacitors) were fabricated to measure the microwave dielectric properties of BST and BZN thin films. The maximum errors in the measured dielectric constants are 24% due to the calibration errors. To improve the dielectric properties of BST thin films, acceptor ions such as lithium (Li) and cobalt (Co) were doped into BST thin films. According to the measured results, the Li doped BST thin film exhibits an increase of dielectric constant and a decrease of dielectric loss, which makes it highly attractive for implementing microwave device. In contrast, the BZN thin films exhibit little dielectric tunability (3.0%) even when a large DC electric field (500kV/cm) is applied. These results demonstrate that ferroelectric BST thin films are still the only practical materials for implementing tunable microwave devices due to its high tunability.
first_indexed 2025-11-14T18:30:39Z
format Thesis (University of Nottingham only)
id nottingham-12754
institution University of Nottingham Malaysia Campus
institution_category Local University
language English
last_indexed 2025-11-14T18:30:39Z
publishDate 2011
recordtype eprints
repository_type Digital Repository
spelling nottingham-127542025-02-28T11:21:09Z https://eprints.nottingham.ac.uk/12754/ An investigation of dielectric tunable materials for microwave tunable devices Xiao, Li Today, many of the communication systems are operated in several different bandwidths. Till now, the common solution to get a multi bandwidth transmitter/receiver is to insert several fixed microwave devices with different bandwidth to the required standard. This increases the size and power consumption of trans/receiver. One solution is to develop electronically tunable microwave devices. By replacing several fixed microwave devices with a single electronically tunable device, the size and power consumptions of the transmitter/receiver can be significantly reduced. The tunable devices are usually implemented by high permittivity tunable materials that exhibit a change of dielectric constant with respect to a DC electric field. In this work, two different types of tunable materials: ferroelectric Barium Strontium Titanate (BST) Oxide and pyrochloe Bismuth Zinc Niobate Oxide (BZN) thin films are investigated. A simple and cost effective chemical solution deposition (CSD) method has been used to prepare the thin films. In addition, two different types of microwave devices (coplanar waveguide and metal insulated metal capacitors) were fabricated to measure the microwave dielectric properties of BST and BZN thin films. The maximum errors in the measured dielectric constants are 24% due to the calibration errors. To improve the dielectric properties of BST thin films, acceptor ions such as lithium (Li) and cobalt (Co) were doped into BST thin films. According to the measured results, the Li doped BST thin film exhibits an increase of dielectric constant and a decrease of dielectric loss, which makes it highly attractive for implementing microwave device. In contrast, the BZN thin films exhibit little dielectric tunability (3.0%) even when a large DC electric field (500kV/cm) is applied. These results demonstrate that ferroelectric BST thin films are still the only practical materials for implementing tunable microwave devices due to its high tunability. 2011 Thesis (University of Nottingham only) NonPeerReviewed application/pdf en arr https://eprints.nottingham.ac.uk/12754/1/546488.pdf Xiao, Li (2011) An investigation of dielectric tunable materials for microwave tunable devices. PhD thesis, University of Nottingham. Dielectric films microwave devices
spellingShingle Dielectric films
microwave devices
Xiao, Li
An investigation of dielectric tunable materials for microwave tunable devices
title An investigation of dielectric tunable materials for microwave tunable devices
title_full An investigation of dielectric tunable materials for microwave tunable devices
title_fullStr An investigation of dielectric tunable materials for microwave tunable devices
title_full_unstemmed An investigation of dielectric tunable materials for microwave tunable devices
title_short An investigation of dielectric tunable materials for microwave tunable devices
title_sort investigation of dielectric tunable materials for microwave tunable devices
topic Dielectric films
microwave devices
url https://eprints.nottingham.ac.uk/12754/