Tunnelling into InAs quantum dots

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Tunnelling into InAs quantum dots

This thesis describes an experimental study of the electronic properties of semiconductor heterostructure tunnel devices. InAs self-assembled quantum dots (QDs) are incorporated into the barrier layer of a GaAs/AlAs/GaAs tunnel diode. When a voltage, V, is applied across the device, we observe reson...

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Bibliographic Details
Main Author:	Hill, Richard John Allan
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2003
Subjects:	quantum dot InAs GaAs resonant tunnelling resonant tunneling Landau level
Online Access:	https://eprints.nottingham.ac.uk/10002/

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