Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer

In this project, a computer simulation model has been developed to study the effect of annealing on the growth and dissolution of the void and oxide precipitation in Czochralski grown silicon wafer.

Bibliographic Details
Main Author:	Lee, Beng Gee
Format:	Thesis
Published:	2004
Subjects:	QD Chemistry
Online Access:	http://shdl.mmu.edu.my/959/

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