Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer

In this project, a computer simulation model has been developed to study the effect of annealing on the growth and dissolution of the void and oxide precipitation in Czochralski grown silicon wafer.

Bibliographic Details
Main Author: Lee, Beng Gee
Format: Thesis
Published: 2004
Subjects:
Online Access:http://shdl.mmu.edu.my/959/
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author Lee, Beng Gee
author_facet Lee, Beng Gee
author_sort Lee, Beng Gee
building MMU Institutional Repository
collection Online Access
description In this project, a computer simulation model has been developed to study the effect of annealing on the growth and dissolution of the void and oxide precipitation in Czochralski grown silicon wafer.
first_indexed 2025-11-14T18:00:04Z
format Thesis
id mmu-959
institution Multimedia University
institution_category Local University
last_indexed 2025-11-14T18:00:04Z
publishDate 2004
recordtype eprints
repository_type Digital Repository
spelling mmu-9592010-07-14T02:31:10Z http://shdl.mmu.edu.my/959/ Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer Lee, Beng Gee QD Chemistry In this project, a computer simulation model has been developed to study the effect of annealing on the growth and dissolution of the void and oxide precipitation in Czochralski grown silicon wafer. 2004 Thesis NonPeerReviewed Lee, Beng Gee (2004) Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer. Masters thesis, Multimedia University. http://myto.perpun.net.my/metoalogin/logina.php
spellingShingle QD Chemistry
Lee, Beng Gee
Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer
title Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer
title_full Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer
title_fullStr Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer
title_full_unstemmed Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer
title_short Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer
title_sort computer simulations of void and oxide precipitate in hydrogen-annealed silicon wafer
topic QD Chemistry
url http://shdl.mmu.edu.my/959/
http://shdl.mmu.edu.my/959/