Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP

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Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP

A stochastic nature of avalanche photodiode (APD) model is developed using Monte Carlo method to study the avalanche characteristics in submicron InP p= -i- n+ diodes. The avalanche characteristics such as multiplication gain, excess noise factor and avalanche built-up time in submicron InP p+ -i-n+...

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Bibliographic Details
Main Author:	You , Ah Heng
Format:	Thesis
Published:	2005
Subjects:	QA299.6-433 Analysis
Online Access:	http://shdl.mmu.edu.my/840/

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