Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP
A stochastic nature of avalanche photodiode (APD) model is developed using Monte Carlo method to study the avalanche characteristics in submicron InP p= -i- n+ diodes. The avalanche characteristics such as multiplication gain, excess noise factor and avalanche built-up time in submicron InP p+ -i-n+...
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| Format: | Thesis |
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2005
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| Online Access: | http://shdl.mmu.edu.my/840/ |
| _version_ | 1848789616649306112 |
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| author | You , Ah Heng |
| author_facet | You , Ah Heng |
| author_sort | You , Ah Heng |
| building | MMU Institutional Repository |
| collection | Online Access |
| description | A stochastic nature of avalanche photodiode (APD) model is developed using Monte Carlo method to study the avalanche characteristics in submicron InP p= -i- n+ diodes. The avalanche characteristics such as multiplication gain, excess noise factor and avalanche built-up time in submicron InP p+ -i-n+ diodes are presented. A realistic FUll Band Monte Carlo (FBMC) model using empirical local pseudopotential band structure is used to simulate multiplication gain, excess noise factor and time response of InP p+ -i-n+ diodes. A simple and fast Random Path Length (RPL) model incorporating the dead-space effect is developed to reproduce the avalanche characteristics of short InP p+ -i-n+ diodes. |
| first_indexed | 2025-11-14T17:59:33Z |
| format | Thesis |
| id | mmu-840 |
| institution | Multimedia University |
| institution_category | Local University |
| last_indexed | 2025-11-14T17:59:33Z |
| publishDate | 2005 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | mmu-8402010-07-06T06:29:45Z http://shdl.mmu.edu.my/840/ Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP You , Ah Heng QA299.6-433 Analysis A stochastic nature of avalanche photodiode (APD) model is developed using Monte Carlo method to study the avalanche characteristics in submicron InP p= -i- n+ diodes. The avalanche characteristics such as multiplication gain, excess noise factor and avalanche built-up time in submicron InP p+ -i-n+ diodes are presented. A realistic FUll Band Monte Carlo (FBMC) model using empirical local pseudopotential band structure is used to simulate multiplication gain, excess noise factor and time response of InP p+ -i-n+ diodes. A simple and fast Random Path Length (RPL) model incorporating the dead-space effect is developed to reproduce the avalanche characteristics of short InP p+ -i-n+ diodes. 2005-05 Thesis NonPeerReviewed You , Ah Heng (2005) Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP. PhD thesis, Multimedia University. http://myto.perpun.net.my/metoalogin/logina.php |
| spellingShingle | QA299.6-433 Analysis You , Ah Heng Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP |
| title | Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP |
| title_full | Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP |
| title_fullStr | Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP |
| title_full_unstemmed | Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP |
| title_short | Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP |
| title_sort | monte carlo simulations of avalanche multiplication, noise and speed in submicron inp |
| topic | QA299.6-433 Analysis |
| url | http://shdl.mmu.edu.my/840/ http://shdl.mmu.edu.my/840/ |