Analytical expression for total Base Transit Time in Epitaxial Bipolar Transistors

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Analytical expression for total Base Transit Time in Epitaxial Bipolar Transistors

The base width of a Bipolar Junction Transistor in an integrated circuit is very small and recombination within the base can safely be neglected. In most of the works on Base Transit Time with reverse biased collector junction the expressions for transit time have been derived separately for high in...

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Bibliographic Details
Main Author:	Khandoker, Ahsan Habib
Format:	Thesis
Published:	1999
Subjects:	TK Electrical engineering. Electronics Nuclear engineering TK7800-8360 Electronics TK7871 Electronics > Materials
Online Access:	http://shdl.mmu.edu.my/6/

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