Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer
In this article the electrical characteristics of zinc oxide nanoparticles (ZnO NP) embedded in polymethylsilsesquioxane (PMSSQ) film have been studied. PMSSQ film with embedded ZnO NP was sandwiched between aluminium and ITO coated glass as a capacitor-based memory device. Charge transport mechanis...
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| Format: | Article |
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2011
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| Online Access: | http://shdl.mmu.edu.my/3363/ |
| _version_ | 1848790307877945344 |
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| author | Lee, W.K. Wong, H.Y. Aw, K.C. |
| author_facet | Lee, W.K. Wong, H.Y. Aw, K.C. |
| author_sort | Lee, W.K. |
| building | MMU Institutional Repository |
| collection | Online Access |
| description | In this article the electrical characteristics of zinc oxide nanoparticles (ZnO NP) embedded in polymethylsilsesquioxane (PMSSQ) film have been studied. PMSSQ film with embedded ZnO NP was sandwiched between aluminium and ITO coated glass as a capacitor-based memory device. Charge transport mechanism in this device has been investigated. The device can be programmed and erased similar to a flash-memory. Programming the device causes the trapping of electrons transported from the aluminium into the ZnO NP via trapped-charge-limited current mechanism. The erasing of the memory device is via the Fowler-Nordheim tunneling of electrons in the opposition direction towards the aluminium electrode. (C) 2011 Elsevier B.V. All rights reserved. |
| first_indexed | 2025-11-14T18:10:32Z |
| format | Article |
| id | mmu-3363 |
| institution | Multimedia University |
| institution_category | Local University |
| last_indexed | 2025-11-14T18:10:32Z |
| publishDate | 2011 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | mmu-33632012-02-29T02:46:02Z http://shdl.mmu.edu.my/3363/ Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer Lee, W.K. Wong, H.Y. Aw, K.C. TA Engineering (General). Civil engineering (General) In this article the electrical characteristics of zinc oxide nanoparticles (ZnO NP) embedded in polymethylsilsesquioxane (PMSSQ) film have been studied. PMSSQ film with embedded ZnO NP was sandwiched between aluminium and ITO coated glass as a capacitor-based memory device. Charge transport mechanism in this device has been investigated. The device can be programmed and erased similar to a flash-memory. Programming the device causes the trapping of electrons transported from the aluminium into the ZnO NP via trapped-charge-limited current mechanism. The erasing of the memory device is via the Fowler-Nordheim tunneling of electrons in the opposition direction towards the aluminium electrode. (C) 2011 Elsevier B.V. All rights reserved. 2011-09 Article PeerReviewed Lee, W.K. and Wong, H.Y. and Aw, K.C. (2011) Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer. Microelectronic Engineering, 88 (9). pp. 2837-2839. ISSN 01679317 http://dx.doi.org/10.1016/j.mee.2011.04.027 doi:10.1016/j.mee.2011.04.027 doi:10.1016/j.mee.2011.04.027 |
| spellingShingle | TA Engineering (General). Civil engineering (General) Lee, W.K. Wong, H.Y. Aw, K.C. Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer |
| title | Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer |
| title_full | Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer |
| title_fullStr | Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer |
| title_full_unstemmed | Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer |
| title_short | Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer |
| title_sort | non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer |
| topic | TA Engineering (General). Civil engineering (General) |
| url | http://shdl.mmu.edu.my/3363/ http://shdl.mmu.edu.my/3363/ http://shdl.mmu.edu.my/3363/ |