Low-power fast (LPF) SRAM cell for write/read operation

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Low-power fast (LPF) SRAM cell for write/read operation

Power consumption and Static noise margin (SNM) are most important parameters for memory design. The main source of power consumption in SRAM cell is due to large voltage swing on the bitlines during write operation. To reduce the power consumption and enhance the performance of the SRAM cell, we pr...

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Bibliographic Details
Main Authors:	Prabhu, C. M. R., Singh, Ajay Kumar
Format:	Article
Published:	2011
Subjects:	TA Engineering (General). Civil engineering (General)
Online Access:	http://shdl.mmu.edu.my/3341/

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