0.18 μm CMOS low noise amplifier for 3-5 GHz ultra-wideband system
A single-stage and cascode stage wideband CMOS low noise amplifier (LNA) that uses the inductive source degeneration network are presented in this paper. The proposed LNAs are implemented in 0.18 mu m CMOS technology for a 3-5GHz ultra-wideband system. The proposed single-stage LNA achieves a simula...
| Main Authors: | , , , |
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| Format: | Book Section |
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IEEE Xplore
2007
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| Online Access: | http://shdl.mmu.edu.my/3280/ |
| _version_ | 1848790283941052416 |
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| author | Mohd Hassan, Siti Maisurah Wong, Sew Kin Kung, Fabian Wai Lee See, Jin Hui |
| author_facet | Mohd Hassan, Siti Maisurah Wong, Sew Kin Kung, Fabian Wai Lee See, Jin Hui |
| author_sort | Mohd Hassan, Siti Maisurah |
| building | MMU Institutional Repository |
| collection | Online Access |
| description | A single-stage and cascode stage wideband CMOS low noise amplifier (LNA) that uses the inductive source degeneration network are presented in this paper. The proposed LNAs are implemented in 0.18 mu m CMOS technology for a 3-5GHz ultra-wideband system. The proposed single-stage LNA achieves a simulated maximum power gain of +9.25dB, minimum noise figure of 3.2dB, minimum return loss of -6.7dB, input-referred 1dB gain compression point of -5.11dBm and input third order intercept point of +3.36dBm while consuming 6.25mW of DC dissipation at a DC supply of 1V. Simulation results for the proposed cascode stage LNA show a maximum power gain of +12.3dB, a minimum noise figure of 3.2dB, a minimum return loss of -5.1dB, an input P1dB of -13dBm and an IIP3 of -4.2dBm, while consuming 10.5mW of DC dissipation with a DC supply of 1.5V. Results obtained from this study can used as reference design for current multi-stage UWB LNAs implementation. |
| first_indexed | 2025-11-14T18:10:10Z |
| format | Book Section |
| id | mmu-3280 |
| institution | Multimedia University |
| institution_category | Local University |
| last_indexed | 2025-11-14T18:10:10Z |
| publishDate | 2007 |
| publisher | IEEE Xplore |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | mmu-32802017-02-21T09:10:47Z http://shdl.mmu.edu.my/3280/ 0.18 μm CMOS low noise amplifier for 3-5 GHz ultra-wideband system Mohd Hassan, Siti Maisurah Wong, Sew Kin Kung, Fabian Wai Lee See, Jin Hui TK Electrical engineering. Electronics Nuclear engineering A single-stage and cascode stage wideband CMOS low noise amplifier (LNA) that uses the inductive source degeneration network are presented in this paper. The proposed LNAs are implemented in 0.18 mu m CMOS technology for a 3-5GHz ultra-wideband system. The proposed single-stage LNA achieves a simulated maximum power gain of +9.25dB, minimum noise figure of 3.2dB, minimum return loss of -6.7dB, input-referred 1dB gain compression point of -5.11dBm and input third order intercept point of +3.36dBm while consuming 6.25mW of DC dissipation at a DC supply of 1V. Simulation results for the proposed cascode stage LNA show a maximum power gain of +12.3dB, a minimum noise figure of 3.2dB, a minimum return loss of -5.1dB, an input P1dB of -13dBm and an IIP3 of -4.2dBm, while consuming 10.5mW of DC dissipation with a DC supply of 1.5V. Results obtained from this study can used as reference design for current multi-stage UWB LNAs implementation. IEEE Xplore 2007-09 Book Section NonPeerReviewed Mohd Hassan, Siti Maisurah and Wong, Sew Kin and Kung, Fabian Wai Lee and See, Jin Hui (2007) 0.18 μm CMOS low noise amplifier for 3-5 GHz ultra-wideband system. In: 2007 International Symposium on Integrated Circuits. IEEE Xplore, pp. 100-103. ISBN 978-1-4244-0796-5 http://dx.doi.org/10.1109/ISICIR.2007.4441806 doi:10.1109/ISICIR.2007.4441806 doi:10.1109/ISICIR.2007.4441806 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Mohd Hassan, Siti Maisurah Wong, Sew Kin Kung, Fabian Wai Lee See, Jin Hui 0.18 μm CMOS low noise amplifier for 3-5 GHz ultra-wideband system |
| title | 0.18 μm CMOS low noise amplifier for 3-5 GHz ultra-wideband system |
| title_full | 0.18 μm CMOS low noise amplifier for 3-5 GHz ultra-wideband system |
| title_fullStr | 0.18 μm CMOS low noise amplifier for 3-5 GHz ultra-wideband system |
| title_full_unstemmed | 0.18 μm CMOS low noise amplifier for 3-5 GHz ultra-wideband system |
| title_short | 0.18 μm CMOS low noise amplifier for 3-5 GHz ultra-wideband system |
| title_sort | 0.18 μm cmos low noise amplifier for 3-5 ghz ultra-wideband system |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://shdl.mmu.edu.my/3280/ http://shdl.mmu.edu.my/3280/ http://shdl.mmu.edu.my/3280/ |