Design and analysis of a GaAs-based 850-nm vertical-cavity surface-emitting laser with different doping in the reflection regions

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Design and analysis of a GaAs-based 850-nm vertical-cavity surface-emitting laser with different doping in the reflection regions

The present paper deals with the analysis of a non-oxide type of vertical-cavity surface-emitting laser (VCSEL) for operation at 850 nm. The modeling and characterization of the VCSEL is presented in the context of design considerations. Efforts are made to emphasize the behavioral features of the p...

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Bibliographic Details
Main Authors:	Mitani, S. M., Choudhury, P. K., Alias, M. S.
Format:	Article
Published:	SPRINGER 2007
Subjects:	T Technology (General) QA75.5-76.95 Electronic computers. Computer science
Online Access:	http://shdl.mmu.edu.my/2986/

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