Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations

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Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations

Direct measurement of the electron velocity v(n) at an extreme electric field E is problematic due to impact ionization. The dependence v(n)(E) obtained by a Monte Carlo method can be verified, however, by comparing simulated and experimental data on superfast switching in a GaAs bipolar transistor...

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Bibliographic Details
Main Authors:	Vainshtein, Sergey, Yuferev, Valentin, Palankovski, Vassil, Ong, Duu-Sheng, Kostamovaara, Juha
Format:	Article
Published:	AMER INST PHYSICS 2008
Subjects:	T Technology (General) QC Physics
Online Access:	http://shdl.mmu.edu.my/2766/

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